1 / 9

Enhancing UV Treatment for Zinc-Tin Acetate Precursors in Thin-Film Applications

This study investigates the effects of UV treatment on the mobility improvement of zinc-tin acetate precursors, specifically exploring various concentrations of tin tert-butoxide and zinc acetate. Despite several modifications, no significant mobility improvements were observed. Optimal conditions included a 300°C annealing process, resulting in enhanced source-drain characteristics. Future work will focus on recalibrating acetate layer thickness and developing clear solutions for Sn and In acetates, aimed at advancing indium-based IZO thin-film transistors.

eve
Télécharger la présentation

Enhancing UV Treatment for Zinc-Tin Acetate Precursors in Thin-Film Applications

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. UV-treatment 0.033M Tin tert-butoxide No mobility improvement 0.15M Zinc acetate 0.2M Zinc acetate UV 5min

  2. Precursor ratio 0.2MZinc acetate 0.03M Tin tert-butoxide 0.035M Tin tert-butoxide 0.04M Tin tert-butoxide 0.25MZinc acetate 0.035M Tin tert-butoxide 0.04M Tin tert-butoxide

  3. Precursor ratio 0.2MZinc acetate:Tin(IV) acetate = 4:1 0.03M Tin tert-butoxide 0.035M Tin tert-butoxide 0.04M Tin tert-butoxide 0.15MZinc acetate:Tin(IV) acetate = 4:1 0.03M Tin tert-butoxide 0.035M Tin tert-butoxide 0.04M Tin tert-butoxide

  4. Best data 0.15MZinc acetate:Tin(IV) acetate = 4:1 0.035M Tin tert-butoxide 300°C, 3hr Annealing Improved S.S. Vth ~ 0 Increased IOff

  5. 0.3MTin tert-butoxide 5:10.15MZinc:Tin (Acetate) 4:10.15MZinc:Tin (Acetate) 3:10.15MZinc:Tin (Acetate) 0.35MTin tert-butoxide 5:10.15MZinc:Tin (Acetate) 4:10.15MZinc:Tin (Acetate) 3:10.15MZinc:Tin (Acetate)

  6. 0.4MTin tert-butoxide 5:10.15MZinc:Tin (Acetate) 4:10.15MZinc:Tin (Acetate) 3:10.15MZinc:Tin (Acetate) 0.3MTin tert-butoxide 0.2M Zinc acetate

  7. 0.33MTin tert-butoxide 0.2M 5% Tin Acetate 0.2M10% Tin Acetate 0.2M15% Tin Acetate 0.35MTin tert-butoxide 0.2M 5% Tin Acetate 0.2M10% Tin Acetate

  8. 0.33MTin tert-butoxide 0.2M 5% Indium Acetate 0.2M10% Indium Acetate 0.2M15% Indium Acetate 0.35MTin tert-butoxide 0.2M 5% Indium Acetate 0.2M10% Indium Acetate

  9. Future work • Re-calibration of acetate layer thickness • Making clear solution of Sn acetate & In acetate • Indium-based IZO TFT

More Related