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Occupancy Studies for CLIC ILD: Update on Digitization

First results on occupancy for the inner layer of CLIC ILD, simulation with Lorentz angle effects, detailed analysis of barrel layout, Lorentz angle effects in digitization, DE ...

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Occupancy Studies for CLIC ILD: Update on Digitization

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  1. Occupancystudies for CLIC_ILD inner layer and Update on Digitization: Tuningwith data, Lorentz angle effects Mathieu Benoit

  2. Outline • First results on Occupancy for the inner layer of CLIC_ILD Following design from workshop • Inclusion of Magnetic Field effects in Digitization • DESY 2-4 GeVelectrons data usingTimepix single chip card

  3. (sub) Barrel 4 or Right Outer barrel (sub) Barrel 3 or Right inner barrel (sub) Barrel 2 or Central barrel (sub) Barrel 1 or Leftinner barrel (sub) Barrel 0 or LeftOuter barrel

  4. Simulation • For Now simulation of layer 0+1, resultshere for layer 0 , the mostcriticalat r=29 mm • Simulation withLivermoreLow EM Physicslist • Max Step-size in Silicon =1 um • Includedetla rays , fluorescence • Geometry : • Magnetic Field = 4 T • Beryliumbeam pipe (600um) • Inside beampipe : air at 1e-2 bar • Timepix-Likedigitization • 20x20um pixels • 50 umthickness • Resistivity = 10 kOhm cm • Threshold = 500e • Lorentx angle not takenintoaccounthere • Plots are preliminary, need to includeactual gap in phi • Module 90 (top right) missing, beingprocessed

  5. Barrel layout (layer 0+1) • To ensurehermeticity, layer 0+1need to beplacedcloser to IP than MC model • Option 1: • Radius(layer 1) = 29 mm (31mm before) • Radius(layer 2) =30.87mm (32.87mm before) • To avoid volume overlap, slightly tilt the ladders (here1.5°) • Option 2: • Tilt sensors by lorentz angle (ex: 15 deg) • Add 1-2 ladders (here , 2-> Icosagon !) • Move back to larger radius (here31.221 mm) mini workshop on engineering aspects of the CLIC vertex detectors

  6. Barrel layout (layer 0+1, option 1) Single hits Double layer, holding on the samemechanical structure not shownhere An option to option 1: Shifting layer 2 vs layer 1 (here 1mm), ladder per ladder to avoidoverlapping gaps mini workshop on engineering aspects of the CLIC vertex detectors

  7. Event Display (1k primarytracks)

  8. HitMap in Layer 0

  9. Hitmap Layer 0 (per Train per Chip)

  10. Occupancy per module in layer 0 %

  11. Occupancy per module in layer 0 (polar view) %

  12. Cluster size subbarrel 0 layer 0

  13. Cluster size subbarrel 1 layer 0

  14. Cluster size subbarrel 2 layer 0

  15. Cluster size subbarrel 3 layer 0

  16. Cluster size subbarrel 4 layer 0

  17. HitMap in Layer 1

  18. HitMap (per Train per mm2)

  19. Occupancy per module in layer 1 %

  20. Occupancy per module in layer 0 (polar view) %

  21. Cluster size subbarrel 0 layer 0

  22. Cluster size subbarrel 1 layer 0

  23. Cluster size subbarrel 2 layer 0

  24. Cluster size subbarrel 3 layer 0

  25. Cluster size subbarrel 4 layer 0

  26. Occupancy Simulation • 2 Scenario : • 20 um pixels, samegeometry + B-Field effect, layer 0-5 • 25 um pixels, layer back by 4mm in r + B-fieldeffects layer 0-5 • In both scenario weneed to addhadronic components, disks

  27. Lorentz angle • Lorentz angle depends on mobilitywhichdepends on Electric field and eventually on dopant concentration • In a 50um 10kOhmcm p-type wafer, 10V bias, E≈[1600,2700]V/cm • Varywithresistivity, bias voltage • In a planarsensor, E isproportional to V applied • V appliedisproportional to thickness2 (Full depletion voltage) • For thinsensor, at full depletion voltage, Electric fieldisverylow • To beinvestigated : How much over Full depletioncanweapply voltage mini workshop on engineering aspects of the CLIC vertex detectors

  28. Lorentz angle effects in Digitization • I have added as an option in the digitizer to takintoaccount the Magneticfield in the motion equation of the charge in the sensor. • The Lorentz angle iscalculatedateachintegrationsteptakingintoaccount : • Local mobility and electricfield • Hall Scattering factor

  29. Lorentz angle effects (0 degrees incidence, B=4T)

  30. Lorentz angle effects (75 degrees incidence, B=4T)

  31. Lorentz angle effects (0 degrees incidence, B=4T), tilted by Lorentz angle

  32. Lorentz angle effects (0 degrees incidence, B=4T), tilted by Lorentz angle

  33. Lorentz angle effects (Cluster Size) !! Lorentz angle increases cluster size (in average) -> Increaseoccupancy

  34. DESY data withlowenergy (2-4 GeV) electrons • Wewereallowed to join ATLAS DBM testbeamat DESY to acquiresome data withTimepixusinglowenergyelectrons (2-4 GeV) (No Tracking) • 6M Frames at 100V 0 deg • 5K Frames at 0,25,50,75 deg • 5k Frames at 0deg, 5V, 10V, 50V • 5k Frames atIkrum 25,50,100 • In average 500 clusters per frame • ToT mode

  35. Some DESY plots (cluster size)

  36. Some DESY plots (cluster size)

  37. Conclusion • Detailed simulation of inner layer for CLIC_ILD new design show higheroccupanciesthan CDR numbers : • Layer is 4 mm closerthanbefore -> Higheroccupancy • Phi dependenceobserved in the end-of-stave chips • Next simulation to beperfomedwith B-Field effectsincluded, larger pixels • Lorentz angle effects have been encoded in the digitizer • Debuggedusing the new event display feature of the digitizer • Ready for use in occupanciesstudies

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