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Chapter 2 Overview of Power Semiconductor Devices

Chapter 2 Overview of Power Semiconductor Devices. Introduction Diodes Thyristors Ideal switches Bipolar transistors MOSFETs MOS-Controlled Thyristors Comparison of controllable switches. Thyristors. Semi-controlled device Latches ON by a gate-current pulse if forward biased

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Chapter 2 Overview of Power Semiconductor Devices

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  1. Chapter 2 Overview of Power Semiconductor Devices • Introduction • Diodes • Thyristors • Ideal switches • Bipolar transistors • MOSFETs • MOS-Controlled Thyristors • Comparison of controllable switches

  2. Thyristors • Semi-controlled device • Latches ON by a gate-current pulse if forward biased • Turns-off if current tries to reverse

  3. Thyristor in a Simple Circuit • For successful turn-off, reverse voltage required for an interval greater than the turn-off interval

  4. Generic Switch Symbol • Idealized switch symbol • When on, current can flow only in the direction of the arrow • Instantaneous switching from one state to the other • Zero voltage drop in on-state • Infinite voltage and current handling capabilities

  5. Switching Characteristics (linearized) • Switching Power Loss is proportional to: • switching frequency • turn-on and turn-off times

  6. Switch: ideal characteristics • Small leakage current in off state • Small on state voltage • Short turn-on and turn-off • Large forward and reverse voltage • High on state current rating • Positive temperature coefficient • Small control power required to switch • Capability to survive rated voltage and rated current simultaneously

  7. Bipolar Junction Transistors (BJT) #1 • Used commonly in the past • Now used in specific applications • Replaced by MOSFETs and IGBTs

  8. Bipolar Junction Transistors (BJT) #2

  9. Bipolar Junction Transistors (BJT) #3

  10. Various Configurations of BJTs

  11. Conclusions BJTs

  12. MOSFETs #1 • Easy to control by the gate • Optimal for low-voltage operation at high switching frequencies • On-state resistance a concern at higher voltage ratings

  13. MOSFETs #2

  14. IGBT

  15. Conclusions IGBT

  16. Gate-Turn-Off Thyristors (GTO) • Slow switching speeds • Used at very high power levels • Require elaborate gate control circuitry

  17. MOS CONTROLLED THYRISTORS (MCT)

  18. Comparison of Controllable Switches

  19. Summary of Device Capabilities

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