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Power Semiconductor Devices

Power Semiconductor Devices

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Power Semiconductor Devices

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  1. Power Semiconductor Devices Xi Liu Biomedical Engineering ECE423

  2. Introduction • What are Power Semiconductor Devices (PSD)? They are devices used as switches or rectifiers in power electronic circuits • What is the difference of PSD and low-power semiconductor device? • Large voltage in the off state • High current capability in the on state

  3. Classification Fig. 1. The power semiconductor devices family

  4. Important Parameters • Breakdown voltage. • On-resistance. Trade-off between breakdown voltage and on-resistance. • Rise and fall times for switching between on and off states. • Safe-operating area.

  5. Power MOSFET: Structure Power MOSFET has much higher current handling capability in ampere range and drain to source blocking voltage(50-100V) than other MOSFETs. Fig.2.Repetitive pattern of the cells structure in power MOSFET

  6. Power MOSFET: R-V Characteristics An important parameter of a power MOSFET is on resistance: , where Fig. 3. Typical RDS versus ID characteristics of a MOSFET.

  7. Thyristor: Structure • Thyristor is a general class of a four-layer pnpn semiconducting device. Fig.4 (a) The basic four-layer pnpn structure. (b) Two two-transistor equivalent circuit.

  8. Thyristor: I-V Characteristics Three States: • Reverse Blocking • Forward Blocking • Forward Conducting Fig.5 The current-voltage characteristics of the pnpn device.

  9. Applications Power semiconductor devices have widespread applications: • Automotive Alternator, Regulator, Ignition, stereo tape • Entertainment Power supplies, stereo, radio and television • Appliance Drill motors, Blenders, Mixers, Air conditioners and Heaters

  10. Application: Automotive Table. 1. Power Devices in automotive systems.

  11. Future Developments For future power conversion applications, new semiconductor devices are needed to be developed. 1.Structure Improvement Insulated Gate Bipolar Transistor (IGBT), static induction transistor (SIT) and MOS-controlled thyristor (MCT) .

  12. Future Developments 2. Material Improvement Silicon carbide (SiC), with a higher field characteristic, is a promising candidate for high power, high temperature and high frequency applications. • High electric breakdown property • High carrier drift velocity • High thermal conductivity • The native oxide of SiC is SiO2

  13. Conclusion The development of power semiconductor devices is very essential for modern electronics. The power devices based on new structures and materials are promising and commercially realistic for future electronic developments.

  14. Thanks!