Overview of VLSI Inverter Design and Manufacturing Processes
This document provides a comprehensive overview of the design and manufacturing processes in VLSI technology, particularly focusing on the flowchart and cross-sectional layout of an inverter. Key components such as n-well, polysilicon, n+ and p+ diffusion, and contact methods are discussed. The iterative process of ion implantation and the significance of design rules based on λ are outlined, including a detailed description of DRC (Design Rule Check) procedures to ensure compliance. This guide facilitates understanding the basic ingredients for creating integrated circuits, particularly using the TSMC 0.18 µm process.
Overview of VLSI Inverter Design and Manufacturing Processes
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Presentation Transcript
Introduction to Layout Jack Ou, Ph.D. CES 522 V VLSI Design Sonoma State University
S S D D Mask Set
Basic Ingriedents • n-well (N_WELL) • Polysilicon (POLY) • n+ diffusion • p+ diffusion • contact • metal
Manufacturing the n-well • Grow a protective Layer of oxide. • Remove oxide in selected region • Ion Implantation
Poly silicon (doped to make good conductor, Block n+ diffusion) • n-diffusion
p-diffusion, contacts and metal Thick metal oxide provides insulation p+ diffusion is made selectively using silicon dioxide and photo resist
λ • λ is half of the smallest feature size • In 0.18 um, λ is 0.09 um • λ based design rules makes it easy to migrate from one process to process. • Industrial design rules are usually specified in microns, which makes it difficult to migrate to a more advanced process.
Example from tsmc 0.18 um process POLY has a width of 2 λ Contacts are 2 λ x 2 λ
Schematic/Layout of an Inverter VDD p+ diffision n+ diffision Ground
Schematic/Layout of a NAND2 VDD p+ diffision n+ diffision Ground
NWELL+N_Plus_Select+ActiveLayer+Contact to Active Layer+Metal 1
DRC Check: to run DRC First: to see the first DRC violation Next: to step through the DRC errors
DRC Results DRC violation
Repaired Layout Enlarged N Plus Select Reduced Result Count
