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Functional Nanoscale Devices

This document presents an overview of recent advancements in functional nanoscale devices and single-charge electronics, including techniques for metal colloid and quantum dot integration, oxidation processes using scanning tunneling microscopes, and various semiconductor structures like double barrier tunnel diodes. It discusses contributions from renowned institutions and researchers in the field, including Hitachi, IBM, and RIKEN, highlighting important developments in nanoscale device architectures, quantum dot flash memory, and magnetoresistance activities that pave the way for future technological innovations.

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Functional Nanoscale Devices

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  1. Functional Nanoscale Devices Rational You ITRI-IEK-NEMS 2001/08/01 Source: IWGN, NSTC (1999/09)

  2. Functional device scales • --- Source: IWGN, NSTC (1999/09)

  3. Single-Charge Electronics -1 • Metal colloids, self-assembled monolayer (SAM) coatings, polysilicon, quantum dots embedded in SiO2 Source: IWGN, NSTC (1999/09), Hitachi, IBM, RIKEN, NTT, ETL, University of Lund

  4. Single-Charge Electronics -2 • Sidewall extensions of MOSFET gate Source: IWGN, NSTC (1999/09), Toshiba

  5. Single-Charge Electronics -3 • Oxidation of metal or semiconductor with scanning tunneling microscope (STM) tip Source: IWGN, NSTC (1999/09), ETL

  6. Single-Charge Electronics -4 • STM probe oxidation of metal on vicinal substrate steps Source: IWGN, NSTC (1999/09), ETL

  7. Single-Charge Electronics -5 • Double barrier tunnel diode structure Source: IWGN, NSTC (1999/09), Max-Planck-Institut, Stuttgart; NTT

  8. Single-Charge Electronics -6 • Gated double barrier tunnel diode structure Source: IWGN, NSTC (1999/09), Max-Planck-Institut, Stuttgart; NTT; Purdue University

  9. Single-Charge Electronics -7 • Depletion layer control of 2DEG area Source: IWGN, NSTC (1999/09), Hitachi, University of Glasgow, University of Tokyo

  10. Single-Charge Electronics -8 • Tetrahedral shaped recess, TSR Source: IWGN, NSTC (1999/09), Fujitsu

  11. Single-Charge Electronics -9 • Double barrier metallic SET patterned by e-beam Source: IWGN, NSTC (1999/09), NEC

  12. Single-Charge Electronics -10 • A single molecule connecting metallic contacts Source: IWGN, NSTC (1999/09), Yale University, University of South Carolina, Delft University, Karlsruhe University

  13. Functional Nanoscale Devices • SET Architectures • Quantum Dot Flash Memory Source: IWGN, NSTC (1999/09)

  14. Giant Magnetoresistance Activities Source: IWGN, NSTC (1999/09), Based on publications, patents or visits

  15. Nano-magnetics • Granular GMR—Co, Fe(Nagoya University, Tohoku University, CNRS-Thomson, UCSB, UCSD) • Current in plane(Matsushita, Fujitsu, Mitsubishi, Toshiba, Hitachi, Thomson, Philips, Siemens, IBM, Univ. Regensburg, IMEC, Nagoya University, Tohoku University, NIST) • Magnetic tunnel junction (IBM, MIT, HP, Tohoku University) • Ferromagnetic/metal/ferromagnetic: 3 - 60 periods free-standing (NRL, CNRS-Thomson, Philips, Michigan State, Lawrence Livermore Labs); plated into pores (L’École Polytechnique Fédérale de Lausanne, Johns Hopkins University, Université Catholique Louven) Source: IWGN, NSTC (1999/09)

  16. Quantum Dot Lasers • Schematic of a semiconductor laser Source: IWGN, NSTC (1999/09)

  17. Quantum Dot Lasers • Density of electronic states as a function of structure size Source: IWGN, NSTC (1999/09)

  18. Quantum Dot Lasers • Summary of Quantum Dot Laser Results Source: IWGN, NSTC (1999/09), Bimberg et al. 1997

  19. Carbon Nanotubes • Nanotube Fabrication Methods • Electrical and Field Emission Properties of Nanotubes Source: IWGN, NSTC (1999/09)

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