1 / 46

MIT-WPU Introduction to Electronics Engineering EC 131 4-2-4

MIT-WPU Introduction to Electronics Engineering EC 131 4-2-4. Field Effect Transistors and CMOS. Field Effect Transistors and CMOS. Introduction to field effect transistors (FET), JFET: construction, working and characteristics,

jmcgahey
Télécharger la présentation

MIT-WPU Introduction to Electronics Engineering EC 131 4-2-4

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. MIT-WPUIntroduction to Electronics EngineeringEC 131 4-2-4

  2. Field Effect Transistors and CMOS

  3. Field Effect Transistors and CMOS • Introduction to field effect transistors (FET), • JFET: construction, working and characteristics, • MOSFET: construction, working • Characteristics of D-MOSFET and E-MOSFET, • Introduction to CMOS, • MOSFET as amplifier, • MOSFET as switch.

  4. Objectives • In the end of this chapter, you’ll be able • to understand and recognize the following two types of FET; JFET and MOSFET • To discuss and differentiate the operation of each two types of FET

  5. FET • FET’s (Field – Effect Transistors) are much like BJT’s (Bipolar Junction Transistors). • Similarities: • • Amplifiers • • Switching devices • • Impedance matching circuits • Differences: • • FET’s are voltage controlled devices whereas BJT’s are current controlled devices. • • FET’s also have a higher input impedance, but BJT’s have higher gains. • • FET’s are less sensitive to temperature variations and because of there construction they are more easily integrated on IC’s. • • FET’s are also generally more static sensitive than BJT’s.

  6. Types of Field Effect Transistors (The Classification) n-Channel JFET p-Channel JFET FET JFET (Junctional FET) MOSFET (Metal Oxide FET) Enhancement MOSFET Depletion MOSFET n-Channel DMOSFET p-Channel DMOSFET n-Channel EMOSFET p-Channel EMOSFET

  7. JFET Construction There are two types of JFET’s: n-channel and p-channel. The n-channel is more widely used. There are three terminals: Drain (D) and Source (S) are connected to n-channel Gate (G) is connected to the p-type material

  8. Basic Operation of JFET JFET operation can be compared to a water analogy: The source of water pressure – accumulated electrons at the negative pole of the applied voltage from Drain to Source The drain of water – electron deficiency (or holes) at the positive pole of the applied voltage from Drain to Source. The control of flow of water – Gate voltage that controls the width of the n-channel, which in turn controls the flow of electrons in the n-channel from source to drain.

  9. N-Channel JFET Circuit Layout How JFET works?

  10. JFET Symbols

  11. MOST LIKELY QUESTIONS • Name three terminals of JFET • Why FET is called voltage controlled device? • Why FET is called unipolar device? • Explain the operation of JFET. • Explain characteristics of JFET. • Compare Pinch off and cut off voltage. • Define JFET parameters.

  12. JFET Operating Characteristics There are three basic operating conditions for a JFET: A. VGS = 0, VDS increasing to some positive value B. VGS < 0, VDS at some positive value C. Voltage-Controlled Resistor

  13. A. VGS = 0, VDS increasing to some positive value Three things happen when VGS = 0 and VDS is increased from 0 to a more positive voltage: • the depletion region between p-gate and n-channel increases as electrons from n-channel combine with holes from p-gate. • increasing the depletion region, decreases the size of the n-channel which increases the resistance of the n-channel. • But even though the n-channel resistance is increasing, the current (ID) from Source to Drain through the n-channel is increasing. This is because VDS is increasing.

  14. Pinch-off If VGS = 0 and VDS is further increased to a more positive voltage, then the depletion zone gets so large that it pinches off the n-channel. Hence, no further increase in drain current and ID becomes essentially constant. Definition: Pinch off voltage For VGS= 0 V, the value of VDS at which ID becomes essentially constant is the pinch off voltage

  15. Saturation At the pinch-off point: • any further increase in VGS does not produce any increase in ID. VDS at pinch-off is denoted as Vp. • ID is at saturation or maximum. It is referred to as IDSS. • The ohmic value of the channel is at maximum.

  16. JFET modeling when ID=IDSS, VGS=0, VDS>VP

  17. B. VGS < 0, VDS at some positive value As VGS becomes more negative the depletion region increases.

  18. ID < IDSS As VGS becomes more negative: • the JFET will pinch-off at a lower voltage (Vp). • ID decreases (ID < IDSS) even though VDS is increased. • Eventually ID will reach 0A. VGS at this point is called Vp or VGS(off). • Also note that at high levels of VDS the JFET reaches a breakdown situation. ID will increases uncontrollably if VDS > VDSmax.

  19. Characteristic curves for N-channel JFET

  20. C. Voltage-Controlled Resistor The region to the left of the pinch-off point is called the ohmic region. The JFET can be used as a variable resistor, where VGS controls the drain-source resistance (rd). As VGS becomes more negative, the resistance (rd) increases. [Formula 5.1] Explain application of FET as VDR or VVR

  21. Transfer Characteristics The transfer characteristic of input-to-output is not as straight forward in a JFET as it was in a BJT. In a BJT,  indicated the relationship between IB (input) and IC (output). In a JFET, the relationship of VGS (input) and ID (output) is a little more complicated: [Formula 5.3]

  22. Transfer Curve From this graph it is easy to determine the value of ID for a given value of VGS.

  23. p-Channel JFETS p-Channel JFET acts the same as the n-channel JFET, except the polarities and currents are reversed.

  24. P-Channel JFET Characteristics As VGS increases more positively: • the depletion zone increases • ID decreases (ID < IDSS) • eventually ID = 0A Also note that at high levels of VDS the JFET reaches a breakdown situation. ID increases uncontrollably if VDS > VDSmax.

  25. Case Construction and Terminal Identification This information is also available on the specification sheet.

  26. DRAWBACKS OF JFET • Gate needs to be Reverse biased for proper operation of the device. • i.e. we can only decrease width of the channel (i.e. decrease the conductivity of channel) • This type of operation is referred to as “Depletion Mode operation”.

  27. MOSFETs MOSFETs (Metal Oxide Semiconductor FET) have characteristics similar to JFETs and additional characteristics that make then very useful. There are 2 types: • Depletion-Type MOSFET • Enhancement-Type MOSFET

  28. Depletion-Type n channel MOSFET Construction The Drain (D) and Source (S) connect to the to n-doped regions. These N-doped regions are connected via an n-channel. This n-channel is connected to the Gate (G) via a thin insulating layer of SiO2. The n-doped material lies on a p-doped substrate that may have an additional terminal connection called SS.

  29. Basic Operation

  30. VGS< 0

  31. Basic Operation A Depletion MOSFET can operate in two modes: Depletion or Enhancement mode.

  32. Depletion-type MOSFET in Depletion Mode Depletion mode The characteristics are similar to the JFET. When VGS = 0V, ID = IDSS When VGS < 0V, ID < IDSS The formula used to plot the Transfer Curve still applies: [Formula 5.3]

  33. Depletion-type MOSFET in Enhancement Mode Enhancement mode VGS > 0V, ID increases above IDSS The formula used to plot the Transfer Curve still applies: [Formula 5.3] (note that VGS is now a positive polarity)

  34. p-Channel Depletion-Type MOSFET The p-channel Depletion-type MOSFET is similar to the n-channel except that the voltage polarities and current directions are reversed.

  35. Symbols

  36. Enhancement-Type MOSFET Construction The Drain (D) and Source (S) connect to the to n-doped regions. These n-doped regions are connected via an n-channel. The Gate (G) connects to the p-doped substrate via a thin insulating layer of SiO2. There is no channel. The n-doped material lies on a p-doped substrate that may have an additional terminal connection called SS.

  37. Operation

  38. Basic Operation The Enhancement-type MOSFET only operates in the enhancement mode. VGS is always positive As VGS increases, ID increases But if VGS is kept constant and VDS is increased, then ID saturates (IDSS) (Pinch off process) The saturation level, VDSsat is reached.

  39. Pinch off

  40. Transfer Curve To determine ID given VGS: where VT = threshold voltage or voltage at which the MOSFET turns on. k = constant found in the specification sheet k can also be determined by using values at a specific point and the formula: VDSsat can also be calculated:

  41. p-Channel Enhancement-Type MOSFETs The p-channel Enhancement-type MOSFET is similar to the n-channel except that the voltage polarities and current directions are reversed.

  42. Symbols

  43. CMOS CMOS – Complementary MOSFET p-channel and n-channel MOSFET on the same substrate. Advantage: • Useful in logic circuit designs • Higher input impedance • Faster switching speeds • Lower operating power levels

  44. Summary Table

  45. Resource Material for the topic • Reference Books: Floyd Thomas, Electronic Devices, Prentice Hall, 9th Edition 2012 • Links to Useful Videos: 1.Lecture series on diode, transistor, JFEThttp://nptel.ac.in/courses/117103063/2 • Links to Useful Resource material:

More Related