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Application of EM model

This document provides an in-depth exploration of the electrical characteristics and applications of the electromagnetic (EM) model in bipolar junction transistors (BJTs). It covers various operational modes including forward active, saturation, and inverse modes. Detailed discussions on transport models, minority carrier concentration, and complete static characteristics are included. The text addresses common-base and common-emitter configurations, as well as critical parameters such as short-circuit current gain, breakdown voltages, and internal capacitances. Ideal for engineering students and professionals.

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Application of EM model

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  1. Application of EM model • forward active mode • saturation mode • inverse mode Chpt. 4e

  2. EM model -- Transport model • transport model of the npn BJT Chpt. 4e

  3. Basic BJT logic inverter Chpt. 4e

  4. minority-carrier concentration • line (c) = conc. Blue => current in base of sat. trans. Grey => sat. Chpt. 4e

  5. Complete Static Characteristics of BJT • common-base characteristics of npn Chpt. 4e

  6. hybrid -p model Chpt. 4e

  7. common-emitter char. Chpt. 4e

  8. expanded view (common-emitter char.) Chpt. 4e

  9. other static char. Of BJT • the transistor b (short-circuit current gain) • transistor breakdown (sustaining voltage) • internal capacitances of BJT • high-frequency hybrid-p model • cutoff frequency Chpt. 4e

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