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Analytical Approach to 3D Detector Engineering: Insights from RD50 Meeting at CERN

This presentation by Vladimir Eremin and Elena Verbitskaya discusses the engineering of 3D detectors, presented at the RD50 13th meeting in CERN. It outlines typical constructions including junction and ohmic columns, and details the electric field distributions, radiation effects, and critical regions within the detectors. Emphasizing the operational parameters such as pinch-off voltage and breakdown voltage, the authors conclude that simple analytical equations can effectively guide the engineering of 3D detectors for high fluence applications.

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Analytical Approach to 3D Detector Engineering: Insights from RD50 Meeting at CERN

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  1. Analytical approach for 3D detectors engineering Vladimir Eremin, Elena Verbitskaya Ioffe Physico -Technical Institute of Russian Academy of Sciences St. Petersburg Russia RD50 13-th meeting, CERN, 10-12 November, 2008

  2. Outline • Typical constructions of 3D detectors • Electric field in 3D detectors • Radiation effects in 3D detectors • Conclusions RD50 13-th meeting, CERN, 10-12 November, 2008 Vladimir Eremin

  3. J/O-Osurf J-Osurf J/O-J/O J/O-SiO2 J-O/Osurf Typical 3D detector constructions Junction column (J) Ohmick column (O) Front side Back side RD50 13-th meeting, CERN, 10-12 November, 2008 Vladimir Eremin

  4. The Large Scale Model and operational parameters The depleted radius (Rd) Sensitive volume (S) The pinch-off voltage (Vpf) The maximum operational voltage (Vm) Cylindrical p+-n junction Spherical p+-n junction RD50 13-th meeting, CERN, 10-12 November, 2008 Vladimir Eremin

  5. r0 Rd The critical regions of 3D detectors Cylindrical Spherical RD50 13-th meeting, CERN, 10-12 November, 2008 Vladimir Eremin

  6. r0 Rd Rd r0 The main equations RD50 13-th meeting, CERN, 10-12 November, 2008 Vladimir Eremin

  7. Rd r0 The electric field distribution around the column Neff=1012cm-3 r0=5u Rd=50u RD50 13-th meeting, CERN, 10-12 November, 2008 Vladimir Eremin

  8. The pinch-off voltage MCZ: 1k cm Neff=4x1012cm-3 r0=5u Rpf=50u r0 Rpf RD50 13-th meeting, CERN, 10-12 November, 2008 Vladimir Eremin

  9. The full depletion voltage MCZ: 1k cm Neff=4x1012cm-3 r0=5u Pitch=a=40u Vpf Vfd r0 Rpf RD50 13-th meeting, CERN, 10-12 November, 2008 Vladimir Eremin

  10. The maximal electric field and pinch- off voltage increase with fluence Cylindrical part MCZ: 1k cm r0=5u Rpf=50u β=1.7e-2 Neff=βxF RD50 13-th meeting, CERN, 10-12 November, 2008 Vladimir Eremin

  11. Rd r0 Effect of 2D and 3D focusing on the breakdown voltage E 2D, 3D 1D x Cylindrical Spherical r0/Rd = 10 Vbr(cyl)=0.4Vbr(planar) Vbr(spher)=0.18Vbr(planar) RD50 13-th meeting, CERN, 10-12 November, 2008 Vladimir Eremin

  12. Fluence, cm-2 The breakdown characteristics of 3D planar detectors at different fluences RD50 13-th meeting, CERN, 10-12 November, 2008 Vladimir Eremin

  13. Conclusions 1. The simple analytical equations can be applied for the engineering of 3D detectors 2. At fluence of 1e16 neutrons/cm2 the pinch-off voltage is close to the breakdown voltage for cylindrical junction. 3. The type of 3D detectors J-O/Osurf with the dead ends of junction and Ohmick columns is promising for the high fluence application J/O-J/O J/O-Osurf J-Osurf J-O/Osurf J/O-SiO2 Thank you for you attention RD50 13-th meeting, CERN, 10-12 November, 2008 Vladimir Eremin

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