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High Precision Design Collaboration for FCAL Electronics at Tel Aviv University

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This paper presents a collaborative effort led by Halina Abramowicz and colleagues at Tel Aviv University, focusing on the high-precision design of the Forward Calorimeter (FCAL) systems. It covers the calculation of charge induced in silicon for detecting signals in units of charge, particularly at 250 GeV for muon and electron samples. The study details the energy loss in silicon and presents a digitization model aimed at achieving resolution with minimal signal loss. Key parameters like sensor thickness and design layers are analyzed for improved performance.

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High Precision Design Collaboration for FCAL Electronics at Tel Aviv University

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  1. FCAL Collaboration High precision design LumiCal Towards electronics design Halina Abramowicz, Ronen Ingbir, Sergey Kananov, Aharon Levy, Iftach Sadeh Tel Aviv University 22/11/2006

  2. Signals in Units of Charge • Sensors Area • Sensors Thickness Physics Sample • 250 GeV MIPS (Muon sample) • 250 GeV electrons (contained EM showers)

  3. Calculating the Charge Induced in Silicon Energy to create electron/hole pair Electron Charge Number of Electrons Signal Charge

  4. MIP Energy Loss in Silicon Energy loss (250Gev MIP): ( See:http://lhcb.physik.unizh.ch/software/doc/loss.pdf) Energy deposited for of silicon This number was also verified in simulation. Cracow’s (Bogdan’s) number (from simulation) is somewhat higher.

  5. MIP Energy Loss in Silicon Energy to create electron/hole pair Charge of 1 electron MIP signal for of silicon

  6. 10 cylinders (θ) 60 cylinders (θ) Cylinders (mrad) 14 11 layers (z) 15 layers (z) 4 layers (z) Present Understanding (pad option) Based on optimizing theta measurement 9

  7. 10 cylinders (θ) 60 cylinders (θ) 11 layers (z) 15 layers (z) 4 layers (z)

  8. High Gain ADC Low Gain Digitization Model The Goal: a resolution of 5 bins per MIP Maximal charge per sensor + buffer FCAL -- TAU

  9. Digitization Model • MIP per bin. • 2. Maximal Shower Charge (electrons) • events cell signal • events cell signal

  10. Summary – 8 Bit Digitization MIP signal for of silicon is for a maximal signal of we therefore have . High gain steps Low gain steps of the Cells are in the high gain region.

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