Microelectronics for the real world: “Moore” versus “More than Moore”

1. EEE8052 Special Topics in Optoelectronics and Photonics Microelectronics for the real world: “Moore” versus “More than Moore” Presented by Juree Hong IEEE 2009 Custom Integrated Circuits Conference (CICC) John P. Kent

2. Contents • Introduction • “More-than-Moore” : functional diversification • Power over ethernet: XtreMOS • More-than-Moore in automotive applications • Microbolometer • Bio-field effect transistors for medical applications (Lap on a chip) • System-in-package (SiP) and System-on-chip (SoC) solutions • Summary and Conclusion • References

3. Introduction Moore’s law & significant improvements in economy • For more than 40 years, the semiconductor industry ability to follow Moore’s law has been the entire of a virtuous cycle: through transistor scailing  Better performance to cost ratio of products  An exponential growth of the semiconductor market Large R&D investment The virtuous circle of the semiconductor industry

4. Introduction “More-than Moore” Definition: Incorporation into devices of functionalities that do not necessarily scale according to "Moore's Law“, but provide additional value in different ways. The "More-than-Moore" approach allows for the non-digital functionalities to migrate from the system board-level into the package (SiP) or onto the chip (SoC).

5. Introduction A new tend of functional diversification : “More-than Moore” • The CMOS transistor : the basic building block for logic devices –represents the digital content of an integrated circuit. • However, many microelectronic products will have non-digital functionalities as well. • The “More-than-Moore” is to incorporate digital and non-digital functionality into compact system. CMOS in reducing the critical dimensions while keeping the electrical field constant!!

6. Introduction A new tend of functional diversification : “More-than Moore” • MtM technologies focus on the interface between “Analog” and the “Digital” world. • Interfacing the digital and analog world will require: • High voltage • High power • RF technologies • In can be realized by intergratingMEMs, sensors, and actuators either by SiP or SoC

7. Introduction “More-than Moore” Innovation driven technology roadmap • Product innovation in MtM technologies is differenciated by circuit design, architecture, embedded software and unique process technology. • These MtM products can be manufactured in proven technologies for high reliability. • Some of the MtM products enabled by innovation and functional diversification. A new virtuous cycle

8. More-than Moore: Functional diversification

9. More-than Moore innovation (1) Power over ethernet: XtreMOS • Power over Ethernet (PoE) • The ability for the LAN switching infrastructure to provide power over a copper ethernet cable to an endpoint or powered devices. • MtM innovation enables POE. • A 1D silicon limit  XtreMOS devices • Low Ron, by a factor of 3 XtreMOS cross section

10. More-than Moore innovation (2) “More than Moore” in automotive applications • Semiconductor electronics contents are more than 50 % of the total electronics by value. • Challenging requirements • High voltages to drive motors, relays, communication interfaces, sensors, and optical drivers • Extreme mechanical stress such as vibrations • Integrated technologies such as non-volatile memory and significant analog and digital integration • Robust environment (high temperature to 200 °C) • High reliability (<1 part per million failure rate The applications of electronics in a car Growth trend in automotive electronics Thick top metal & 8 mm wire bonding

11. More-than Moore innovation (3) Microbolometer: IR sensors for automotive, military, industrial and consumer applications • Infrared imaging for military applications / on quantum detection • Operated at liquid nitrogen temperature  Restricted use of this technology • An innovation in microbolometertechnology • Microbolometer : a specific type of bolometer used as a detector in a thermal camera • New materials in the CMOS process : infrared thermal detection at room temperature • Low cost infrared imaging system for automotive, industrial applications Infrared light Diode type micro-bolometers (128x128 array)

12. More-than Moore innovation (3) Microbolometer: IR sensors for automotive, military, industrial and consumer applications • A bolometer operation • Infrared radiation  absorbed infrared radiation into an infrared absorbing material  temperature rise  resistance change • Bolometer resistance change makes the current change  read out current change by a read-out integrated circuit (ROIC) • Vanadium oxide (Vox) • One of the materials used to detect temperature changes in bolometer • Wavelength range : 9 – 14 μm • A block diagram of a complete sensor circuit • CMOS process technology as a ROIC and an integrated micro-electro-mechanical system (MEMS)

13. More-than Moore innovation (3) Microbolometer: IR sensors for automotive, military, industrial and consumer applications • Fabrication of microbolometer • A combined MEMS/CMOS process • Various interconnect elements of the pixel : readout contact, leg, and a bridge • Application • Increasing beyond military use • Automotive safety, security, consumer electronics

14. More-than Moore innovation (4) Bio-Field effect transistors (FETs) for medical applications • Lab on a chip • A device that integrates one or several laboratory functions on a single chip of only millimeters to a few square centimeters in size with the handling of extremely small fluid volumes • Ion sensing field effect transistor (ISFET) • Ion sensitive materials as a gate • Ion concentration change  threshold voltage change  change in transistors’ I-V characteristics • Quick diagnostic is possible with portable Lab-on-Chip. ISFET built on a CMOS process flow Lab on chip developed by NASA Microfluidic bio-molecule detector

15. More-than Moore innovation (5) System-in-package (SiP) and system-on-chip (SoC) and solutions to conventional scaling • Innovations in packaging : System-in-package (SiP) • A SiP optionally contain passives, MEMS, optical components and other packages and devices. • Integrating multiple circuits into a single chip : System-on-chip (SoC) • In the MtM we may want to emphasize that “a single integrated circuit” is in fact monolithic (single die) and that, consequently, all components (functions) have to be manufactured in a single (CMOS-compatible) process technology. Circuit component in a 3D SiP Programmable Systems on Chip Lab

16. More-than Moore innovation (5) System-in-package (SiP) and system-on-chip (SoC) and solutions to conventional scaling • Low cost solutions • For the continued improvement in density, performance, and size • SiP provides advantages over SoC in most markets. • SiP technology • Wafer-level packaging • Die stacking • Through-silicon vias (TSV) • Embeded actives and passives *ITRS meeting, 2007 SiP provides a solution to achieve cost effective functional diversification (More-than-Moore)!

17. More-than Moore innovation (5) System-in-package (SiP) and system-on-chip (SoC) solutions to conventional scaling • Small form factors • High functional density • Large memory capacity • High reliability • Low package cost • Rapid time-to-market • Wireless connectivity • Extensive packages SiP requirements • The highest level of integration is achieved through 3-D packaging.

18. More-than Moore innovation (5) System-in-package (SiP) and system-on-chip (SoC) solutions to conventional scaling • Wafer thinning : 8 μm by 2015 • Reliability • Coherent crack formation, interfacial delamination,voids and pore formation, material decmposition • Thermal dissipation issue • Signal and power integrity and shielding • Cross talk, impedancediscontinuities, and timing skew • Testing of SiP • Fine pitch capabilities, low cost, no damage • Pre-packaging test, electrical test, assembly of chip, functional test of the packaged chip SiP Challenges Back-side integrated fluidic heat sink Without and with metallic shield

19. Summary and conclusion • Enabling Moore’s law requires large R&D investments. Overall R&D spending by semiconductor companies worldwide increased at an annual average rate of 10%. Thus keeping up with scaling is becoming expensive and unaffordable. • However, a new trend of functional diversification is emerging that does not necessarily scale but provides additional value to the customer: “More-than-Moore” • This approach allows the development of new products through innovation in circuit design, process modules architecture, embedded software, unique process technology and packaging solutions. • Packaging advances (SiP and SOC) allow non-digital functions such as RF, power control, passive components, sensors and actuators to migrate from the system board level into a package level implementation. • However, 3D level SiP integration has many challenges such as power dissipation, noise shielding, reliability and testing. These challenges have to be resolved before SiP technology can meet its potential.

20. References • J. Appels and V. Vaes, “HV thin layer devices (resurfdevices,” IEDM Technical Dig., 1979, p238. • T. Fujihira, “Theory of semiconductor superjunctiondevices”, Jpn. J. Appl. Phys., 36, 1997 p6254. • P. Moens et al, “XtreMOS, the first integrated power device breaking the silicon limit”, IEDM, 2006, p919. • A.P. Soldatkin et al, Sensors and Actuators, 1985, no 8, p91 • F. Scheller, F. Schubert, Biosensors, 1992, p. 92 • Young-Chul Lee and Byung-KiSohn, J. Korean Phys. Soc. 2002, Vol.40, p.601. • M. Kollar, Measurement Science Review, Vol. 6, 2006, p39. • G.F Blackburn, Biosensors, 1987, p. 481. • M. Kraus et al, Bioscope I, 1993 p. 24. • ITRS, Assembly and Packaging, 2007, p.40 • B.Dang, M.S. Bakir and J. Meindl, IEEE, EDL, 2006, vol.27, p. 117. • M.S. Bakir, B. Dang and J. Meindl, IEEE, CICC, 2007

21. Thanks for Listening