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Ferroelectric Domain Wall Motion I-Wei Chen, University of Pennsylvania, DMR 0303458

Ferroelectric Domain Wall Motion I-Wei Chen, University of Pennsylvania, DMR 0303458.

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Ferroelectric Domain Wall Motion I-Wei Chen, University of Pennsylvania, DMR 0303458

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  1. Ferroelectric Domain Wall Motion I-Wei Chen, University of Pennsylvania, DMR 0303458 A new theory of behavior for domain-wall motion, the “sliding wall” that separates ferroelectric domains, has been developed based on observations in atomistic simulations. Scaled up, this model explains how BaTiO3 and Pb(Zr,Ti)O3 could work in high density ferroelectric computer memory (FeRAM). Domain wall having mostly down-dipoles, except in the center 3x3 square. The gradual down-to-up transition is bordered by small dipoles pointing sideway. This diffuse nucleation model greatly lowers the energy barrier for domain wall motion.

  2. Ferroelectric Domain Wall Motion I-Wei Chen,University of Pennsylvania,DMR 0303458 Simulation and theory (red) are in agreement with the experimental results (blue) reported in the literature. Between 240K and 300K, it is possible to switch a 100 nm domain in 10-9 s to 10-7 s, a sufficiently fast speed for digital memory. The voltage required is about 0.1-0.2 V for a domain of 10 nm thick.

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