1 / 40

Chap 3

Chap 3. Simple Diode I-V Representation. V ON = 0.7v. Ideal. R Leak. R ON =ohms. Lab Diode Symbols and Ckt Representation. Diode Symbols and Ckt Representation. Diode SPICE parameters. Simple Diode Rectifer. R Leak. R on =RS =10 ohms. Limiters/Clippers. R Leak. 10V. -8V.

lacy
Télécharger la présentation

Chap 3

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Chap 3

  2. Simple Diode I-V Representation VON = 0.7v Ideal RLeak RON =ohms

  3. LabDiode Symbols and Ckt Representation

  4. Diode Symbols and Ckt Representation

  5. Diode SPICE parameters

  6. Simple Diode Rectifer RLeak Ron =RS =10 ohms

  7. Limiters/Clippers RLeak 10V -8V

  8. Limiters/Clippers Con’t Zeners V+VZ VZ -VD -V-VZ VD 3.3V -VD 3.3V+VZ Vo = RDiode Vin/(RDiode+R)

  9. LOG COMPUTATION AND THE DIODE

  10. COMPUTATION AND THE DIODE

  11. COMPUTATION AND THE DIODE Temperature measurement Take away!

  12. RFID Doublers

  13. RFID Doublers |RS + jXCB | < |20xRL + JXCL| “Short Ckt”

  14. RFID Doublers

  15. RFID Doublers

  16. RFID Doublers

  17. Zener Regulation Supplemental Material

  18. Full Wave Rectifier Supplemental Material

  19. Full Wave Rectifier Inputs

  20. Voltage Doubler/Clamped Cap

  21. Basic Semiconductor Concepts-Review Fixed carrier concentration! @ Temp

  22. Basic Semiconductor Concepts

  23. Doping Example Fixed carrier concentration! Either holes or electrons

  24. Diffusion Currents

  25. Drift Currents

  26. Open Ckt pn Junction Cap. Source of Junction Cap

  27. Open Ckt pn Junction

  28. Rev. pn Junction-Depletion Cap.

  29. Reverse Bias pn Junction

  30. Fwd. pn Junction on the Small Signal

  31. Fwd. pn Junction-Diffusion Cap.

  32. Diode Switching Supplemental Material

  33. Small Signal vs Large Signal Supplemental Material

  34. DC vs AC (Small signal) Supplemental Material

  35. Diode Summary Forward bias: Initially Qp is zero,all If goes to dQp/dt In steady state , Supplemental Material Charge Storage: The process of excess charge removal to undo the charge just built up. Until the removal of Qp is complete, diode will continue to remain on with Vd  0.7V.

  36. Diode Summary Cuttoff: During this transient no substantial amount of excess holes is built up. id = dQj/dt. The applied current goes to charge Cj .A simple first order circuit. Charging of Cj is confirmed by the spike in the current. Supplemental Material

  37. Diode Summary Neagtive Ir should confirm Charge at time t is given by Supplemental Material

  38. Diode Summary Reverse recovery: All of Qp has been swept , and the diode is back at the edge of conduction. Retraces its initial turn on transient , but in reverse direction. Id is negative , but is still governed by Supplemental Material

  39. Diode SPICE parameters

  40. Diode Summary

More Related