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Optimizing Pixel Sensors for High Breakdown Voltages: Study at Purdue University

Explore research at Purdue University on pixel sensors for the CMS Experiment. Discover the effects of metal layers on breakdown voltage and leakage current, as well as the impact of inter-pixel resistance and capacitance. The study compares non-oxygenated wafers from CSEM and SINTEF, highlighting key design optimizations and challenges. Learn about the sensitivity of oxygenated wafers to humidity and the need for more data to analyze their performance. Gain insights into the ideal pixel sensor designs and their characteristics post-depletion.

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Optimizing Pixel Sensors for High Breakdown Voltages: Study at Purdue University

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Presentation Transcript

  1. Pixel Sensors for the CMS Experiment Purdue University Amitava Roy Carsten Rott Daniela Bortoletto Gino Bolla

  2. Wafers • 3 non-oxygenated wafers from CSEM • 2 non-oxygenated and 1 oxygenated wafer from Sintef

  3. Breakdown Voltage CSEM

  4. Design Optimization • Pixels with metal on top have higher breakdown voltage. • 3 best designs - design A, F & G G A F

  5. Leakage Current • CSEM - 50-100 nA/cm2 • SINTEF - 5-25 nA/cm2

  6. Oxygenated Wafer • Too sensitive to Humidity!

  7. Inter-pixel Resistance • Around 100 KOhm before depletion! • Around 1 TOhm after depletion ! N+ P+ V A A R=V/I Variable V Constant V

  8. Inter-Pixel Resistance Open Double Ring

  9. Inter-Pixel Resistance Single Ring has lower resistance as expected Open Single Ring Open Double Ring

  10. Inter-pixel Capacitance N+ P+  C Inter-pixel Capacitance 100fF

  11. Conclusion • Leakage Current  100nA/cm2 • Best Designs - Design A, F & G with metal on top. • Need more wafers to get statistics about Oxygenated wafer. • Inter-pixel resistance - 100 KOhm before depletion, 0.1-1 Tohm after depletion. • Inter-pixel Capacitance - 100fF

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