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Ferroelectric Switching of BaTiO 3 Without Bottom Electrodes

Ferroelectric Switching of BaTiO 3 Without Bottom Electrodes. (A). (B). Transmission electron microscope image of a BTO thin film on the Si substrate PFM amplitude (left) and phase (right) images for a 16 nm (top images) and 1.6 nm (bottom images) BTO films.

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Ferroelectric Switching of BaTiO 3 Without Bottom Electrodes

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  1. Ferroelectric Switching of BaTiO3 Without Bottom Electrodes (A) (B) Transmission electron microscope image of a BTO thin film on the Si substrate PFM amplitude (left) and phase (right) images for a 16 nm (top images) and 1.6 nm (bottom images) BTO films PFM work was performed at the Center for Nanophase Materials Sciences • C. Dubourdieu, J. Bruley, T.M. Arruda, A. Posadas, J. Jordan-Sweet, M. M. Frank, E. Cartier, D. J. Frank, S. V. Kalinin, A. Demdov, V. Narayanan, Nature Nanotech.20138, 748 Scientific Achievement Ferroelectric switching of epitaxial BaTiO3 (BTO) thin films has been demonstrated on Si substrates with an out-of-plane c-axis and no bottom electrode. Significance and Impact The long suspected but unachieved ferroelectric switching of epitaxial BTO on Si substrates has been reported. This material has direct implications for the development of low temperature and low power consuming field effect transistors, paving the way for the next generation of memory and logic computing devices Research Details • BTO thin films were deposited on Si using mature atomic layer deposition techniques • Synchrotron x-ray diffraction and scanning transmission electron microscopy studies reveal that the long-axis of the tetragonal BTO structure is perpendicular to the Si substrate • Piezoresponse force microscopy (PFM) studies reveal that the polarization can be switched reversibly with a 180o phase change

  2. Ferroelectric Switching of BaTiO3 on Silicon for Next Generation Computing Devices (A) (B) Transmission electron microscope image of a BTO thin film on the Si substrate PFM amplitude (left) and phase (right) images for a 16 nm (top images) and 1.6 nm (bottom images) BTO films PFM work was performed at the Center for Nanophase Materials Sciences • C. Dubourdieu, J. Bruley, T.M. Arruda, A. Posadas, J. Jordan-Sweet, M. M. Frank, E. Cartier, D. J. Frank, S. V. Kalinin, A. Demdov, V. Narayanan, Nature Nanotech.20138, 748 Scientific Achievement Long suspected ferroelectric switching of BaTiO3 directly on a semiconductor substrate has been demonstrated. Significance and Impact Transistors of this composition may be built by standard techniques to produce faster, higher memory and lower power consuming memory and computing devices Research Details Using atomic layer deposition, very thin layers of active BaTiO3 material were synthesized and investigated. High resolution electron microscopy revealed the material could be made with the preferred structural orientation. Scanning probe microscopy methods confirmed that the films are ferroelectric, a highly desired characterization for memory devices.

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