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Phase Change Technology. in optical and electrical memory applications . Bologna 28-05-2012. Giuliano Marcolini. Classification of memories. Data type Analogic memories Digital memories Data retention Volatile memories Non-volatile memories Data access
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PhaseChangeTechnology in optical and electricalmemoryapplications. Bologna 28-05-2012 Giuliano Marcolini
Classificationofmemories • Data type • Analogicmemories • Digitalmemories • Data retention • Volatile memories • Non-volatilememories • Data access • Sequentalaccessmemories • Randomaccessmemories
Classificationofmemories Analogic Memories
Classificationofmemories Analogic Memories volatile SRAM, DRAM Digital
Classificationofmemories Analogic Memories volatile SRAM, DRAM Digital Non-volatile ROM,PROM,E(E)PROM
Classificationofmemories Analogic Memories volatile SRAM, DRAM Digital Non-volatile ROM,PROM,E(E)PROM Memory Card, SSD
Classificationofmemories Analogic Memories volatile SRAM, DRAM Digital Non-volatile ROM,PROM,E(E)PROM Memory Card, SSD Magnetic disk
Classificationofmemories Analogic Memories volatile SRAM, DRAM Digital Non-volatile ROM,PROM,E(E)PROM Memory Card, SSD Magnetic disk Opticalmemory
Classificationofmemories Analogic Memories volatile SRAM, DRAM Digital Non-volatile ROM,PROM,E(E)PROM Memory Card, SSD Magnetic disk Opticalmemory
Phasechangematerials: T [K] Tmelt Tglass Troom Time [sec]
Phasechangematerials: T [K] Tmelt Tglass Troom Time [sec]
Phasechangematerials: T [K] Tmelt Tglass Troom Time [sec]
Phasechangematerials: T [K] Tmelt Tglass Troom Time [sec]
Phasechangematerials: T [K] Tmelt Tglass Troom Time [sec]
Phasechangematerials: T [K] Tmelt Tglass Troom Time [sec]
Phasechangematerials: T [K] Tmelt Tglass Troom Time [sec]
CD vs DVD vs Blu-rayWriting 400 nm 700 nm
CD vs DVD vs Blu-rayWriting 400 nm 700 nm
CD vs DVD vs Blu-rayWriting 400 nm 700 nm
Classificationofmemories Analogic Memories volatile SRAM, DRAM Digital Non-volatile ROM,PROM,E(E)PROM PCM Memory Card, SSD FalshMemory PhaseChangeMemories Magnetic disk Opticalmemory
PhaseChangeMemories R [Ω] ≈ 109Ω ≈ 105Ω
PhaseChangeMemories:memorycell Top electrode PhaseChange Materials Resistor (heater) Bottomelectrode
PhaseChangeMemories:memorycell Amorphous Cristalline I [A] time
Classificationofmemories Analogic Memories volatile SRAM, DRAM Digital Non-volatile PCM FalshMemory Magnetic disk Opticalmemory
Briefoverview:Static and Dynamic RAM SRAM DRAM
Briefoverview:Flash memorycell Vg Vs Vd
PCM vs Flash Flash PCM • Electriccharge • Physicalphases • Writetime≈ 10 µs • Writetime≈ 0.1 µs • Endurance ≈ 5000 cyclep.s. • Endurance ≈ 107cycle • Retention ≈ 50,10,5,2 yr • Retention≈ 300 yr (at 85°) • Low radiationres. • High radiationres.
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