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Chamber A (HDP-CVD) 製程氣體

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Chamber A (HDP-CVD) 製程氣體. Chamber D (PE-CVD) 製程氣體. PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature < 400 ℃ Depo Rate. PROCESS DATA Chamber “D” DxZ (SiO2 1.0K) Depo Rate. Chamber “D” DXZ ( PE-OX-1.0K ). PROCESS DATA Chamber “D” DxZ (PE-SiN 1.0K) Depo Rate.

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Chamber A (HDP-CVD) 製程氣體

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  1. Chamber A (HDP-CVD) 製程氣體

  2. Chamber D (PE-CVD) 製程氣體

  3. PROCESS DATA Chamber “A” HDP (HDP 1.0K), Temperature < 400℃ Depo Rate

  4. PROCESS DATA Chamber “D” DxZ (SiO2 1.0K) Depo Rate Chamber “D” DXZ ( PE-OX-1.0K )

  5. PROCESS DATA Chamber “D” DxZ (PE-SiN 1.0K) Depo Rate Chamber “D” DXZ ( PE-NIT-1.0K-R )

  6. 填洞能力-1(Gap Fill,Via)

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