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Radiation Effects in SiGe Devices

Radiation Effects in SiGe Devices Akil Sutton, Marco Bellini, Ryan Diestelhorst, Anuj Madan, Tom Cheng, Bongim Jun, and John D. Cressler MURI Review: Vanderbilt University, Nashville, TN June 14, 2007. School of Electrical and Computer Engineering

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Radiation Effects in SiGe Devices

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  1. Radiation Effects in SiGe Devices Akil Sutton, Marco Bellini, Ryan Diestelhorst, Anuj Madan, Tom Cheng, Bongim Jun, and John D. Cressler MURI Review: Vanderbilt University, Nashville, TN June 14, 2007 School of Electrical and Computer Engineering 777 Atlantic Drive, N.W., Georgia Institute of Technology Atlanta, GA 30332-0250 USA cressler@ece.gatech.edu Tel (404) 894-5161 / http://users.ece.gatech.edu/~cressler/

  2. Outline • • Some Updates from the SiGe World • New Avenues for RHBD in Bulk SiGe HBTs • Probing the TID Damage Physics of SiGe HBTs • Radiation Effects in Complementary SiGe HBTs • Radiation Effects in SiGe MODFETs • Progress / Plans

  3. SiGe Strained Layer Epi The Bright Idea! • Practice Bandgap Engineering … but do it in Silicon! ΔEV

  4. The SiGe HBT • • Conventional Shallow and Deep Trench Isolation + CMOS BEOL • • Unconditionally Stable, UHV/CVD SiGe Epitaxial Base • • 100% Si Manufacturing Compatibility • SiGe HBT + Si CMOS on wafer E B C 50 nm SiGe = III-V Speed + Si Manufacturing Win-Win! SiGe

  5. The SiGe Success Story • RapidGenerational Evolution (full SiGe BiCMOS) • Many DoD Opportunities! - SiGe HBT + Si CMOS (RF to mm-wave + analog + digital for SoC / SoP) > 500 GHz Potential 4th 3rd 2nd 1st Important Point:200-500 GHz @ 130 nm!

  6. SiGe mm-wave Comm • Wireless 60 GHz (ISM band) Data Links (>1.0 Gb/sec!) DARPA Funded Courtesy of IBM

  7. SiGe Radar Systems Single Chip X-band SiGe T/R (4x4 mm2) MDA Funded Begs For SiGe! Paradigm Shifting Impact for DoD Phased Array Radar!

  8. Extreme Environments • Cryogenic Temperatures (e.g., 77K = -196C) • High Temperatures (e.g., 200C) • Radiation (e.g., Earth orbit) Cars Drilling Moon / Mars CEV Aerospace

  9. NASA ETDP Project “SiGe Integrated Electronics for Extreme Environments” Objectives: Develop and Demonstrate Extreme Environment Electronic Components Required for Distributed Architecture Lunar / Martian Robotic / Vehicular Systems Using SiGe HBT BiCMOS Technology • Extreme Environment Requirements: (e.g., Lunar) • +120C (day) to -180C (night) + cycling(main focus) • radiation (TID + SEU tolerant) • Major Project Goals / Approach: - prove SiGe BiCMOS technology for +120C to -180C applications - develop mixed-signal electronics with proven extreme T + rad capability - develop best-practice extreme T range circuit design approaches - deliver compact modeling tools for circuit design (design suite) - deliverrequisite mixed-signal circuit components (component library) - deliverrobust packaging for these circuits (integrated multi-chip module) - demonstrate device + circuit + package reliability per NASA specs - develop a robust maturation path for NASA mission insertion (TRL-6) Goal:Be Ready for NASA Insertion

  10. 5” wide by 3” high by 6.75” long = 101 cubic inches 11 kg weight 17.2 Watts power dissipation -55oC to +125oC 1.5” high by 1.5” wide by 0.5” long = 1.1 cubic inches < 1 kg < 2-3 Watts -180oC to +125oC, rad tolerant Remote Electronics Unit The ETDP Remote Electronics Unit, circa 2009 The X-33 Remote Health Unit, circa 1998 REU in connector housing! Analog front end die Digital control die Conceptual integrated REU system-on-chip SiGe BiCMOS die Goals Specifications • Suite of REU Sensor Types: • Temperature, Strain, Pressure, Acceleration, Vibration, Heat Flux, Position, etc.

  11. Total-Dose Response • Multi-Mrad Total Dose Hardness (with no intentional hardening!) - ionization + displacement damage very minimal; no ELDRS either! • Radiation Hardness Due to Epitaxial Base Structure (not Ge) - thin emitter-base spacer + heavily doped extrinsic base + very thin base 63 MeV Protons 63 MeV Protons 4th 3rd 200 GHz SiGe HBT 2nd 1st 63 MeV protons @ 5x1013 p/cm2 = 6.7 Mrad TID!

  12. Single Event Effects • Observed SEU Sensitivity in SiGe HBT Shift Registers - low LET threshold + high saturated cross-section 50 GHz SiGe HBTs Goal… The ‘Achilles Heel’ of SiGe and Space! 1.6 Gb/sec P. Marshall et al., IEEE TNS, 47, p. 2669, 2000

  13. The Intuitive Picture • Collector-substrate (n+/p-) Junction Is a Problem (SOI solves this) • Lightly Doped Substrate Definitely Doesn’t Help! Heavy Ion (GeV cosmic ray) Very Efficient Charge Collection!

  14. SEU: TCAD to Circuits New RHBD SiGe Latch “TCAD Ion Strike” OUT DATA CLOCK UPSETS Leverage: NASA-NEPP, DTRA, NASA ETDP, DARPA Georgia Tech, Auburn, Vanderbilt Collaboration Standard Master Slave Latch SEU “Soft”

  15. SEU Tolerant Latches • Reduce Tx-Tx Feedback Coupling Internal to the Latch • Circuit Architecture Changes + Transistor Layout Changes Dual-Interleaved Limiting Cross-section (no errors!)

  16. Outline • • Some Updates from the SiGe World • New Avenues for RHBD in Bulk SiGe HBTs • Probing the TID Damage Physics of SiGe HBTs • Radiation Effects in Complementary SiGe HBTs • Radiation Effects in SiGe MODFETs • Progress / Plans

  17. 77K Proton SEU Testing A Fundamental Question: How Does Temperature Affect SEU? • Experiment (63 MeV protons at 300K + 77K) - 16-bit Shift Registers  Standard M/S latch vs. RHBD variant - data rates of 2-5 Gbit/s at normal incidence Leverage: NASA-NEPP, DTRA, NASA ETDP and Vanderbilt DURIP (test equipment) Paul Marshall’s able assistance was key!

  18. 77K SEU Cross-Section • Nearly 3x Increase in Upset Cross-section at 77K • - not totally unexpected: increased mobility + lifetime • RHBD SR Outperforms Standard M/S by > 10x at 77K (4Gb/s) • In Qualitative Agreement with Vanderbilt TCAD Simulations Need Better Setup For 77K Broadbeam Heavy Ion Measurements (in progress)

  19. Layout-Based RHBD • Transistor-Level Layout Variations for QCOLL Reduction? - alternate pn junction (n-ring) designed to shunt electron charge away Collaboration with Vanderbilt and Auburn Leverage of NASA-NEPP + DTRA + NASA-ETDP + Sandia

  20. Ion Microbeam Results • Alternative Low Impedance Path Shunts Collected Electrons • 20 – 25% Reduction in Peak and Integrated QCOLL at 3µm Spacing Integrated QCOLL inside DT (a) and outside DT (b) Peak QCOLL Other Candidate Techniques to Be Measured Next Week – Stay Tuned!

  21. New RHBD Latches • New Latch-Level Circuit Hardening Scheme Introduced • Low Area / Power / Speed Overhead vs. Previous RHBD Designs Capable of > 20 Gbps Operation with RHBD!

  22. Outline • • Some Updates from the SiGe World • New Avenues for RHBD in Bulk SiGe HBTs • Probing the TID Damage Physics of SiGe HBTs • Radiation Effects in Complementary SiGe HBTs • Radiation Effects in SiGe MODFETs • Progress / Plans

  23. Mixed-Mode Stress • Simultaneous High Current + High Voltage Stress (JE + VCB) - very complex damage response: 3 different mechanisms (at least) - damages both EB spacer and STI edge (just like radiation) - complex dependence on VCB, JE, area, temperature, etc. Q: Can Mixed-Mode Stress Shed Light on Radiation Damage?

  24. Mixed-Mode Annealing • Certain Stress Conditions Can Remove Radiation Damage - induced forward + inverse mode base leakage current is removed - high voltage + high current self-heating plays a role - effect observed in multiple SiGe technology platforms / nodes

  25. Outline • • Some Updates from the SiGe World • New Avenues for RHBD in Bulk SiGe HBTs • Probing the TID Damage Physics of SiGe HBTs • Radiation Effects in Complementary SiGe HBTs • Radiation Effects in SiGe MODFETs • Progress / Plans

  26. C-Si BJT Leverage • Complementary (npn + pnp) Si BJT Technology (C-Si): - very important in the core analog IC market (C-Si BiCMOS) - cost adder but still a huge win for this high-value-add market - enables a wide variety of best-of-breed precision analog blocks - enabling technology for many analog IC apps: e.g., drivers, video amps, bus interfaces, DAC/ADC, op amps, etc. - enables better current sources - enables push-pull driver topologies - enables low voltage / low-power analog designs - enables low noise circuits (especially 1/f) - C-Si BJTs do not have to push the fT envelope (higher BV) - CMOS is not a natural fit as an analog device (V scaling et al.)

  27. An Observation … Until Very Recently, SiGe HBT = npn SiGe HBT

  28. npn vs pnp SiGe HBTs • npn: no impact of band offset on minority carriers at low JC • pnp: strong impact of band offset on minority carriers at low JC npn SiGe HBT pnp SiGe HBT

  29. C-SiGe Technology #1 • Dual SiGe Epi Deposition (B doped for npn / AS doped for pnp) • Thick Film SOI for Isolation • Core Analog IC Design Platform for Texas Instruments pnp SiGe HBT npn SiGe HBT PS: Should be SEU Tolerant as Built! npn SiGe HBT

  30. TI’s BiCOM3X Platform • Irradiated with 63 MeV protons and 10 keV X-rays • Thick-film (1.25 mm) SOI Behavior Similar to Bulk Devices • Negligible dc and ac degradation (300K) We Will Be Starting Some Circuit Work in This Platform Shortly

  31. Substrate Bias Effects • Substrate Bias (20 V) During Irradiation Increases Inverse Gummel (STI) Degradation (circuit impact?) 63 MeV Proton 10 keV X-rays VS = 20V VS = 20V VS = 0V VS = 0V

  32. C-SiGe Technology #2 • IHP’s Complementary SiGe HBT Technology • - low RC and CCS collector construction (no STI between E and C) • - highly-tuned vertical doping profile • - reduced phosphorus diffusion in the C-doped base pnp SiGe HBT npn SiGe HBT [1] B. Heinemann, et al, IEDM, pp. 117-120, 2003

  33. IHP C-SiGe Technology • Record Performance for a C-SiGe HBT Process • - 170 GHz npn SiGe HBT + 90 GHz pnp SiGe HBT!

  34. TID Effects in C-SiGe • pnp SiGe HBTs Appear More Radiation Tolerant Than npn’s • Q: Are the Damage Mechanisms Fundamentally Different?

  35. Outline • • Some Updates from the SiGe World • New Avenues for RHBD in Bulk SiGe HBTs • Probing the TID Damage Physics of SiGe HBTs • Radiation Effects in Complementary SiGe HBTs • Radiation Effects in SiGe MODFETs • Progress / Plans

  36. SiGe n-MODFETs Collaboration with S. Koester at IBM

  37. SiGe n-MODFETs • Impact of Radiation-Induced Damage on RF Characteristics • 10 keV X-ray irradiation degrades fmax but not fT • degradation dependent on LSD rather than LG (S/D Resistance) We Now Have SiGe p-MODFETs in Hand – Stay Tuned!

  38. Progress / Plans • SiGe Offers Great Potential for Many DoD Applications - SiGe HBT + Si CMOS (RF to mm-wave + analog + digital for SoC / SoP) • Many Issues in SiGe Still Need Attention • - improved understanding of basic damage mechanisms (TID + SEE) • - understand the effects of temperature on damage mechanisms / SEE • - need to assess SET in analog/mixed-signal SiGe circuits • - explore other SiGe HBT variants (SiGe HBT on SOI, C-SiGe, etc.) • - explore other (new) SiGe-based devices (SiGe MODFETs, photonics, etc.) • - develop new RHBD approaches (device + circuit) for SEE mitigation • - need improved 3D TCAD for understanding SEE (and TID) • Lots of Leverage for SiGe Hardware / Testing Activity • - many SiGe tapeouts (IBM, IHP, TI, Jazz, ST): devices + circuits • - DTRA / NASA-NEPP (Paul Marshall) • - NASA SiGe ETDP Project (RHESE) • - CFDRC SBIR (DTRA) for Improved TCAD for SEU / Cryo-T, etc. • - excellent collaboration between Georgia Tech and Vanderbilt teams

  39. Publications [1] A. Madan, B. Jun, R.M. Diestelhorst, A. Appaswamy, J.D. Cressler, R.D. Schrimpf, D.M. Fleetwood, T. Isaacs-Smith, J.R. Williams, and S.J. Koester, “Radiation Tolerance of Si/SiGe n-MODFETs,” IEEE Nuclear and Space Radiation Effects Conference, paper PF-8, 2007. [2] M. Bellini, B. Jun, A.C. Appaswamy, P. Cheng, J.D. Cressler, P.W. Marshall, B. El-Kareh, S. Balster, and H. Yasuda, “The Effects of Proton Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI,” IEEE Nuclear and Space Radiation Effects Conference, paper PF-7, 2007. [3] R.M. Diestelhorst, S. Finn, B. Jun, A.K. Sutton, P. Cheng, P.W. Marshall, J.D. Cressler, R.D. Schrimpf, D.M. Fleetwood, H. Gustat, B. Heinemann, G.G. Fischer, D. Knoll, and B. Tillack, “The Effects of X-Ray and Proton Irradiation on a 200 GHz / 90 GHz Complementary (npn + pnp) SiGe:C HBT Technology,” IEEE Nuclear and Space Radiation Effects Conference, paper F-5, 2007. [4] L. Najafizadeh, B. Jun, J.D. Cressler, A.P.G. Prakash, P.W. Marshall, and C.J. Marshall, “A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References,” IEEE Nuclear and Space Radiation Effects Conference, paper PF-6, 2007. [5] J.A. Pellish, R.A. Reed, R.A. Weller, M.H. Mendenhall, P.W. Marshall, A.K. Sutton, R. Krithivasan, J.D. Cressler, S.M. Currie, R.D. Schrimpf, K.M. Warren, B.D. Sierawski, and G. Niu, “On-Orbit Event Rate Calculations for SiGe HBT Shift Registers,” IEEE Nuclear and Space Radiation Effects Conference, paper H-3, 2007. [6] A.K. Sutton, J.P. Comeau, R. Krithivasan, J.D. Cressler, J.A. Pellish, R.A. Reed, P.W. Marshall, M. Varadharajaperumal, G. Niu, and G. Vizkelethy, “An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs,” IEEE Nuclear and Space Radiation Effects Conference, paper C-6, 2007. [7] P. Cheng, B. Jun, A.K. Sutton, C. Zhu, A. Appaswamy, J.D. Cressler, R.D. Schrimpf, and D.M. Fleetwood, “Probing Radiation- and Hot Electron-Induced Damage Processes in SiGe HBTs Using Mixed-Mode Electrical Stress,” IEEE Nuclear and Space Radiation Effects Conference, paper PA-4, 2007. [8] T.S. Mukherjee, K.T. Kornegay, A.K. Sutton, R. Krithivasan, J.D. Cressler, G. Niu, and P.W. Marshall, “A Novel Circuit-Level SEU-Hardening Technique For Low-Voltage, Ultra-High-Speed SiGe HBT Logic Circuits,” IEEE Nuclear and Space Radiation Effects Conference, paper PC-6, 2007. [9] M. Varadharajaperumal, G. Niu, X. Wei, J.D. Cressler, R.A. Reed, and P.W. Marshall, “3-D Simulation of SEU Hardening of SiGe HBTs Using Shared Dummy Collector,” IEEE Nuclear and Space Radiation Effects Conference, paper H-4, 2007.

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