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STEIN Telescope Detection Plan for Space Mission CINEMA

This document outlines the detection plan for the STEIN telescope of the CINEMA space mission conducted on August 3rd, 2011. It covers details such as the number of detectors, energy range, field of view, detector specifications, fabrication process, electrical tests, upcoming tests, and suggestions for result interpretation. The document emphasizes the importance of precise particle spectra generation, detector fabrication with high-quality materials, and upcoming tests to evaluate capacitance, impurities concentration, and leakage current. It also discusses tests involving the IDeF-X front-end electronics for performance evaluation. Suggestions are provided for result interpretation to ensure clear identification of noise components and the intrinsic resolution of the detector.

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STEIN Telescope Detection Plan for Space Mission CINEMA

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  1. Detection plan for STEIN, telescope of the space mission CINEMA August 3td 2011-Diana Renaud

  2. Detection plan • STEIN has 32 detectors : neutralatoms, electrons ans ions • Energy range : 2 – 300 keV (for electrons) • FOV • Charge particle : 40° x 70° • ENA : 20° x 80° • Energyresolution : 1 keV • Possible to generatepreciseparticlespectra • Dectector : SiliconSemiconductorDectectorwiththin entrance window • Noise performance of IDeF-X : possible to exploit the extremelylow capacitance of these detectors August 3td 2011-Diana Renaud

  3. Detectors August 3td 2011-Diana Renaud

  4. Fabrication of the detectors • SSD: reverse-biased silicon diode (p-n junction) • Main goal : minimize the diode reverse-leakage current (due to the generation of carriers in the depletion region) • Minimization of the noise • High quality float-zone refined silicon • Interests of ultra-pure SC: large depletion layers low defect concentrations => large lifetimes • Gettering layer during process of fabrication • Define the size of the detector Comparison of 2 devices realized with and without the gettering layer August 3td 2011-Diana Renaud

  5. About the fabrication of the detectors Final structure of the detector Beforeremoving the gettering layer • For flashingdetectors: thickness of Al layer isdetermined by simulation and is about 900 Å August 3td 2011-Diana Renaud

  6. Electrical tests Probe card Frame to maintain detectors August 3td 2011-Diana Renaud

  7. Upcoming tests • Capacitance vs bias voltage by measuring the capacitance vs bias voltage wecanobtain the voltage atwhich the detector isfullydepleted. In the case of THEMIS detector, itfullydepletes by about 28 V. Results of THEMIS detectors August 3td 2011-Diana Renaud

  8. Upcoming tests • Impurities concentration measurement • We can determine the final concentration by measuring the capacitance and then plotting 1/C² vs bias volatage August 3td 2011-Diana Renaud

  9. Upcoming tests • Current vs biased voltage This characteristicgives the leakagecurrent for each pixel vs bias voltage August 3td 2011-Diana Renaud

  10. Upcoming test Tests withIDeF-X : • Characterization of the front-end electronicswithout detectors to determine the gain and noise vs the peaking time (performance evaluation of the circuit) • Simulation of a detector Tests withIDeF-X and detectors : • Electrical test • Test with sources for the spectroscopy : evaluation of the performances August 3td 2011-Diana Renaud

  11. Suggestions for the interpretation of results • Further analyze the correlation between the results obtained by spectroscopy and those obtained by measurement noise (without source). • Extract the intrinsic resolution of the detector and check that all the noise components are clearly identified. • If measurements are perfect, spectral resolution should be a composition of the two individual components : electronic noise and the intrinsic resolution of the detector (theoretical value) August 3td 2011-Diana Renaud

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