Stress-Induced Effects in Ni-InGaAs Formation: Analysis and Implications

Feb 06, 2026

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This study investigates the stress-induced effects during the formation of Ni-InGaAs, with a focus on the impact of compressive and tensile strains on material properties. Supervisor Prof. Shadi A. Dayeh guides the research towards understanding Ni-based alloys, particularly the behavior of Ni4InGaAs2 and In0.53Ga0.47As. The implications are critical for silicon nanowire FET applications under uniaxial tensile strain. The research builds on existing literature examining lateral diffusion in Ni-GaAs couples using advanced transmission electron microscopy techniques.

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Stress-Induced Effects in Ni-InGaAs Formation: Analysis and Implications

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Stress Induced by Ni-InGaAs Formation Renjie Chen Supervisor: Prof. Shadi A. Dayeh
Ni Ni Compressive Strain Ni-InGaAs Ni-InGaAs InGaAs Tensile Strain
Feste, S. F., et al. "Silicon nanowire FETs with uniaxial tensile strain." Solid-State Electronics 53.12 (2009): 1257-1262.
Ni4InGaAs2: a=0.396nm, c=0.516nm In0.53Ga0.47As: a=0.587nm Palmstrtfm, C., Lateral diffusion in Ni-GaAs couples investigated by transmission electron microscopy. J. Mater. Res 1988,3 (6).
Groenen, J.; Landa, G.; Carles, R.; Pizani, P. S.; Gendry, M.. Journal of Applied Physics 1997,82 (2), 803-809.
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