Boron Diffusion Process with Oxidation for Semiconductor Fabrication

Jan 04, 2026

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This process involves a series of steps for boron diffusion using oxidation to refine semiconductor wafers. Initially, boron is predeposited at 1000°C for 20 minutes. Next, a drive process occurs in a dry oxidizing environment for 2 hours at the same temperature. The background carrier concentration is maintained at 1E14 cm-3 throughout. Following photolithography and etching, boron is implanted with a dose of 9.22 x 10^14 cm-2 at an energy of 30 keV. Another drive step is conducted under the same oxidizing environment, ensuring effective diffusion and activation of boron.

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Boron Diffusion Process with Oxidation for Semiconductor Fabrication

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Examples
Diffusion with oxidation • Boron predeposition at 1000oC for 20 minutes • Drive in a dry oxidizing environment for 2 hours at 1000oC • Background carrier concentration is 1E14 cm-3

Surface of wafer
After Photolith and Etching
Diffusion
Boron implant with Q = 9.22x1014 cm-2 • Implant energy = 30keV • Drive in a dry oxidizing environment for 2 hours at 1000oC • Background carrier concentration is 1E14 cm-3