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IGBT Module Test Project

IGBT Module Test Project. Tanran Zheng – Yu Guan Group No. 63 Instructors: Prof. Scott Carney, Igor Fedorov. Overview. Problem : V -I characteristics of Insulated Gate Bipolar Transistors Modules located in Computer Numerical Control machines Solution :

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IGBT Module Test Project

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  1. IGBT Module Test Project TanranZheng – Yu Guan Group No. 63 Instructors: Prof. Scott Carney, Igor Fedorov

  2. Overview • Problem: • V-I characteristics of Insulated Gate Bipolar Transistors • Modules located in Computer Numerical Control machines • Solution: • Simulate operating environment • Plot V-I characteristics

  3. Features • Power source • Load simulating motor • Test chamber with automatic temperature controller • Program for control and record data

  4. IGBT Test System

  5. System Overview • Hardware: • 0-30 V DC power supply, PIC controller, thermocouple, heating strip, voltmeter, computer • Software: • PID controller, designed program • PWM

  6. Block Diagram

  7. Power Module • Input: 120V AC • Output :0-30 V controllable DC • Error: less than 0.2 V

  8. Load Calculation

  9. Gate-Emitter Voltage Simulation

  10. Test Result Simulation

  11. Collector-Emitter Voltage Simulation

  12. Test Result Simulation

  13. Test Environment Module • PID controller • Highest temperature 110 degree Celsius

  14. PIC Schametic

  15. PID Controller

  16. Matlab Code of Ziegler-Nichols tuning rule

  17. PID Step Response

  18. Test Environment Module

  19. Measurement Module

  20. Data Acquisition Module

  21. SWOT Analysis

  22. Future Development • Improve measurement part – more stable and accurate • Improve use life of the system • Improve Safety

  23. Ethical Considerations • IEEE Code of Ethics • Safety, health and welfare of the public • Disclose promptly dangerous factors

  24. Conclusion • Safety, Low Budget, Convenient • The results will be used to extrapolate the modules’ behaviors under high temperature and high voltage

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