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ECE 224a Process and Design Rules

ECE 224a Process and Design Rules. Process Overview Device Fabrication Limits Derived Layers Self Alignment/Dual Damascene/CMP Design Rules Resolution/Step Coverage/Process Electrical/Reliability/Mechanical Stress. A Modern CMOS Process. Dual-Well Trench-Isolated CMOS Process.

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ECE 224a Process and Design Rules

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  1. ECE 224a Process and Design Rules • Process Overview • Device Fabrication Limits • Derived Layers • Self Alignment/Dual Damascene/CMP • Design Rules • Resolution/Step Coverage/Process • Electrical/Reliability/Mechanical Stress

  2. A Modern CMOS Process Dual-Well Trench-Isolated CMOS Process

  3. The Manufacturing Process • Photo-Lithography • Mask to Resist • Resist to Pattern Layer • Process (Implant/Etch/Oxide/Nitride/…) • Cleanup (Clean/Planarization/Anneal) • Setup next Layer for Processing For a great reference source: http://www.reed-electronics.com/semiconductor

  4. Photo-Lithographic Process optical mask oxidation photoresist photoresist coating removal (ashing) stepper exposure Typical operations in a single photolithographic cycle (from [Fullman]). photoresist development acid etch process spin, rinse, dry step

  5. Patterning of SiO2 Chemical or plasma etch Si-substrate Hardened resist SiO 2 (a) Silicon base material Si-substrate Photoresist SiO 2 (d) After development and etching of resist, chemical or plasma etch of SiO 2 Si-substrate Hardened resist (b) After oxidation and deposition SiO of negative photoresist 2 Si-substrate UV-light Patterned (e) After etching optical mask Exposed resist SiO 2 Si-substrate Si-substrate (f) Final result after removal of resist (c) Stepper exposure

  6. p-epi (a) Base material: p+ substrate with p-epi layer + p Si N 3 4 SiO (b) After deposition of gate-oxide and 2 p-epi sacrificial nitride (acts as a buffer layer) + p (c) After plasma etch of insulating trenches using the inverse of the active area mask p + CMOS Process Walk-Through

  7. SiO 2 (d) After trench filling, CMP planarization, and removal of sacrificial nitride n (e) After n-well and V adjust implants Tp p (f) After p-well and V adjust implants Tn CMOS Process Walk-Through

  8. poly(silicon) (g) After polysilicon deposition and etch n + + p (h) After n + source/drain and p + source/drain implants. These steps also dope the polysilicon. SiO 2 (i) After deposition of SiO 2 insulator and contact hole etch. CMOS Process Walk-Through

  9. Al (j) After deposition and patterning of first Al layer. Al SiO 2 (k) After deposition of SiO 2 insulator, etching of via’s, deposition and patterning of second layer of Al. CMOS Process Walk-Through

  10. Advanced Process Modules

  11. Lithography for 0.1um Node 80 nm Lines 120 nm Contact Holes

  12. 50nm Poly Gate Etch  100nm Experimental Simulation Pre-trim Trim X sec Trim X+20 sec Resist trimming is predictable by computer simulation as well as experiment.

  13. 12A Gate Oxide

  14. Advanced Metallization

  15. Al/Low-k1 Cu/Low-k1 22% 15% Interconnect RC Trend • RC delay is evaluated at minimum M2 pitch

  16. Design Rules • What can be fabricated? • Resolution Limits • Light Source (357nm, 254nm, 193nm, ?) • Contact/Phase Masking • Surface State (Reflection/Scattering) • Material Limits • Step Coverage • Porosity/Defect Propagation • Mechanical/Thermal Stress

  17. Design Rules II • Electrical Limits • Electrical Fields (MV/cm)! • Parasitic Conductivity/Devices (Latchup/ESD) • Joule Heating (Electro-Migration) • Defect Probability • Contact/Via Replication • Grid-Based Power/Ground Networks • Advance Lithography • Rule Explosion/Failure of Locality • CMP Area Rules/Antenna Rules

  18. 845A 85nm Poly Gate Profile

  19. CL013 Core Device * Fanout = 1 ring oscillator ** room temp. & worst case.

  20. 0.13/0.18 Comparison * Please refer to shrinkage guideline for non-shrinkable details

  21. 3D Perspective Polysilicon Aluminum

  22. Poly-SiGe Gate Poly SiGe

  23. Design Rules III • Interface twixt designer and process engineer • Unit dimension: Minimum Feature Size • scalable design rules: lambda • absolute dimensions: (Vendor rules) • Process Design Layers • Derived Layers

  24. Layer Color Representation Well (p,n) Yellow Active Area (n+,p+) Green Select (p+,n+) Green Polysilicon Red Metal1 Blue Metal2 Magenta Metal3 Gold Contact to poly/diff Black Vias Black CMOS Process Design Layers

  25. Intra-Layer Design Rules Different Potential Same Potential 3 18 0 Polysilicon Well or 6 2 12 3 3 Metal1/2 Active Contact or Via 2 3 3 Hole 2 3 2 Metal3 Select 5

  26. Transistor Layout 3.1 FET length 2 (min) 3.2 FET spacing 3 3.3 Poly Overlap 2 3.4 Active Overlap 3 3.5 Space 1

  27. Active Contact I 6.1 Size 2x2 6.2 Enclosure 1.5 6.3 Spacing 3 6.4 Space to FET 2

  28. Poly Contact I 5.1 Size 2x2 5.2 Enclosure 1.5 5.3 Spacing 3 5.4 Space to FET 2

  29. Via (m1 to m2) 8.1 Size 2x2 8.2 Spacing 3 8.3 Enclosure 1 8.4 Space to Contact 2 8.5 Space to Poly/Act 2 9.1 Min Width 3 9.2.a Spacing 3 9.2.b Spacing 6 (width>10) 9.3 Enclosure 1

  30. N-Select 2 6 2 1 3 3 2 6 N-well P-well Select Layer

  31. CMP Density Rules • Chemical-Mechanical Polishing • Requires uniform density of metal/poly • SCMOS Rules: • Poly 30% density across each 1mm2 area • M1, M2 15% density • M3 (top metal) is not restricted since no further polishing…

  32. Layout Guidelines I • Group Transistors into Cells • Plan inter-cell wires first (Sticks) • Oversize Power Grids (Cell Default >6) • Frequent Substrate Contacts/Well Plugs • Every Well (even one will kill design!) • Max distance to plug/contact 5-8 microns • Set a large user grid e.g. 1-2 lambda • Don’t optimize until you know the constraints • Plan for Change and Optimization

  33. Electromigration (1)

  34. Electromigration (2)

  35. Metal Migration • Al (2.9mWcm M.P. 660 C) • 1mA/mm2 at 60C is average current limit for 10 year MTTF • Current density decreases rapidly with temperature • Cu (1.7mWcm M.P. 1060 C • 10mA/mm2 at 100C or better (depends on fabrication quality) • Density decreases with temperature, but muchslower over practical Silicon operation temperatures <120C • Find Average current through wire – check cross section • Be wary of Via’s!! Typical cross-section: 20-40% of minimal wire.

  36. Layout Guidelines II • Current Limits • 1 mA/mm2 Avg. current limit (50C) • Strongly Temp Dependent (Al) • Failures typically occur at vias and contacts • Vias often Tungsten (higher resistance) • Wide Wires need via arrays! • Transistor Contacts • Active is highly resistive • Avoid High Density Currents

  37. Pads

  38. Pads-- Chip to Board Interface • Pads drive large Capacitances • 5pf minimum to much larger • Rise time control • Board Impeadance and Noise • L dI/dt Noise • Coupling to Power Distribution • ESD

  39. L Chip Packaging Bonding wire • Bond wires (~25m) are used to connect the package to the chip • Pads are arranged in a frame around the chip • Pads are relatively large (~100m in 0.25m technology),with large pitch (100m) • Many chips areas are ‘pad limited’ Chip Mounting cavity L Lead Pin

  40. Pad Frame Layout Die Photo

  41. Pad Example • Multiple busses provide clean/driver power • VDD/GND pads drive the busses • Output pads have protection circuitry and driver circuitry • Input pads have protection circuitry • Seal Ring • Guard Rings

  42. Bus Detail • Multiple supply rings simplify pad design • Generic Layout Simplifies custom tuning • Guard Rings Between sections of pad • ESD/Driver • Controller

  43. Seal Ring • Seal Ring is essentially a guard ring with metal layers and contacts placed to lower overglass to substrate evenly at chip boundary • Hermetic seal of chip from atmosphere and other contamination

  44. Pad Frame • Large Power Busses Surround Die • ESD in PADS • Driver/Logic in Pads • Seal Ring • Drive Bypass

  45. Chip to Board Interface-- Pad Design • Buffer to drive PCB-scale parasitics • Capacitance 5-50pF, Impedance 30-90W • Rise-Time Control • Noise injection to circuits and power supply • ESD • Protection of chip-scale components • Perimeter Pads/Area Bump

  46. V DD V V in out C L Driving Large Capacitances • Transistor Sizing • Cascaded Buffers

  47. Using Cascaded Buffers In Out CL = 20 pF 1 2 N 0.25 mm process Cin =2.5 fF tp0 = 30 ps F = CL/Cin = 8000 fopt = 3.6 N = 7 tp = 0.76 ns (See Chapter 5)

  48. Trade off Performance for Area and Energy Given tpmax find N and f Area Energy Output Driver Design

  49. Delay as a Function of F and N 10,000 F 10,000 = 1000 tp/tp0 0 p t / p t 100 F 1000 = F 100 = 10 1 3 5 7 9 11 Number of buffer stages N

  50. Output Driver Design 0.25 mm process, CL = 20 pF Transistor Sizes for optimally-sized cascaded buffer tp= 0.76 ns Transistor Sizes of redesigned cascaded buffer tp= 1.8 ns

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