High-Performance ITO and Ni-Au Films for Enhanced Nitride-Based LED Applications

DESCRIPTION

This study explores the deposition of indium-tin-oxide (ITO) and nickel-gold (Ni-Au) films on various substrates, including glass and GaN layers. The ITO film, with a thickness of 80 nm, exhibits a remarkable transparency of 93.2% at 465 nm and a low specific contact resistance of 1.6 x 10^-3 cm²Ω on n+-SPS structures. These findings highlight the potential of ITO in improving the efficiency and performance of nitride-based light-emitting diodes (LEDs), paving the way for advancements in optoelectronic devices.

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Mar 18, 2014

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High-Performance ITO and Ni-Au Films for Enhanced Nitride-Based LED Applications

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Introduction The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)–Au(10 nm) films were separately deposited on glass substrates,p-GaN layers, n+-InGaN–GaN short-period-superlattice (SPS) structures, and nitride-based light-emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e., 93.2% at 465 nm) and also areasonably small specific contact resistance of 1.6*10 -3 cm2Ω.
Structure Ti/Au/Ti/Au ITO (80nm) orNi(5nm)/Au(10nm) SPS: Si-doped n+ In0.23Ga0.77N -GaN (5/5Å) Mg-doped p-type GaN (0.25um) Mg-doped Al0.15Ga0.85N (50nm) Ti/Au/Ti/Au MQW*5 period Well: In0.23Ga0.77N (3nm) Barry:GaN (7nm) Si-doped n-GaN (2um) Nucleation GaN (30nm) Sapphire Chip Size:350*350 um2 deposited on nitride-based LED

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