1 / 8

Bottom-up Technology

Bottom-up Technology. Toshitake Takahashi. A. B. C. Exfoliate. PmPV Suspension in DCE solvent. E. D. Centrifuge. Background on the synthesis of graphene sheet and graphene nanoribbon. Fabrication method so far. - Peel-off method Epitaxial growth Chemically.

saddam
Télécharger la présentation

Bottom-up Technology

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Bottom-up Technology Toshitake Takahashi

  2. A B C Exfoliate PmPV Suspension in DCE solvent E D Centrifuge Background on the synthesis of graphene sheet and graphenenanoribbon Fabrication method so far • - Peel-off method • Epitaxial growth • Chemically Required new approach for Large scale application K. S. Novoselov, et al. Science 2004, 306, 666. Li, X. L. et al. Science 319, 1229–1232 (2008) W. A. de Heer, et. al. Science 2006, 312, 1191.

  3. Making GNR from MWCNT • - PMMA- MWCNT film was peeled off in KOH solution • Top side wall of MWCNT were etched faster and • removed by plasma

  4. Diameter/Width/Height distribution Diameter distribution of pristine MWCNT Width and height distribution of GNR

  5. Electrical property of GNR 7 nm-wide GNR device measured in air • p-type behavior due to • Physisorbed O2 16 nm-wide GNR device measured in vacuum • After electrical annealing • Symmetric electron and hole • transport

  6. GNR fabrication with nanowire as etching mask

  7. Electrical characteristic of GNR • Transfer characteristic is strongly dependent on width • Opening of bandgap due to enhanced carrier confinement • and edge effect as GNR width is reduced

More Related