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High-Brightness InGaN–GaN Power Flip-Chip LEDs

High-Brightness InGaN–GaN Power Flip-Chip LEDs. P.K. Lin. 1. Outline. Introduction Experiments Results and Discussion Conclusion References. 2. Introduction.

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High-Brightness InGaN–GaN Power Flip-Chip LEDs

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  1. High-Brightness InGaN–GaN Power Flip-Chip LEDs P.K. Lin 1

  2. Outline • Introduction • Experiments • Results and Discussion • Conclusion • References 2

  3. Introduction • Conventional nitride-based LEDs emit photons from the p-side indium-tin-oxide (ITO) contact. However, a significant amount of photons will be obscured by the bonding pads and wires. One effective way to enhance LED output power is to use flip-chip (FC) technology. 3

  4. Experiments Power chip size: 1mm x 1mm Fig. 1. Schematic diagrams of (a) LED-I (b) LED-II. 4

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