'6h sic' diaporamas de présentation

Epitaxial growth of graphene on 6H-silicon carbide substrate by simulated annealing method

Yoon Tiem Leong School of Physics, Universiti Sains Malaysia Talk given at the Theory Lab, School of Physics, USM 24 Jan 2014. Epitaxial growth of graphene on 6H-silicon carbide substrate by simulated annealing method.

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543 views • 45 slides

Color Centers in Silicon Carbide

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MOSFET Device Structure

MOSFET Device Structure. Semiconductor Equations. Poisson Equation:. Electron current continuity equation:. Hole current continuity equation:. Electron current equation:. Hole current equation:. MOSFET Device Simulation. Converged?. Iterative Gummel Block Method. Solve for f , n, p.

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