'Annealing' diaporamas de présentation

Epitaxial growth of graphene on 6H-silicon carbide substrate by simulated annealing method

Yoon Tiem Leong School of Physics, Universiti Sains Malaysia Talk given at the Theory Lab, School of Physics, USM 24 Jan 2014. Epitaxial growth of graphene on 6H-silicon carbide substrate by simulated annealing method.

1.05k views • 82 slides

Lecture 4 The L 2 Norm and Simple Least Squares

Lecture 4 The L 2 Norm and Simple Least Squares. Syllabus.

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Study of low temperature poly silicon for solar cells

Study of low temperature poly silicon for solar cells. Advisor: Dr. Hon Kuan Student: Tsung-Yu Li Date ? 98/04/22. Outline. Introduction Experimental Results and discussion Conclusions References. Introduction. ?????? ????????????????????????????????????????????????

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CT-Video Registration Accuracy for Virtual Guidance of Bronchoscopy

CT-Video Registration Accuracy for Virtual Guidance of Bronchoscopy. James P. Helferty, 1,2 Eric A. Hoffman, 3 Geoffrey McLennan, 3 and William E. Higgins 1,3. 1 Penn State University, University Park, PA 16802 2 Lockheed-Martin, King of Prussia, PA 3 University of Iowa, Iowa City, IA 52242

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23 th November 2010

Possibly relevant new from RD50 G. Casse. 23 th November 2010. Annealing: p-in-n, n-in-p (n) Charge trapping Multiplication. Evolution of Sensor Properties After Irradiation.

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Effect of post processes on characteristics of SSG dielectrics

Effect of post processes on characteristics of SSG dielectrics. Experiment. << Original process >>. << Modified process >>. Dipping I (Precursor adsorption). Dipping I (Precursor adsorption). Dipping II (Washing). Dipping II (Washing). 10 cycles. 10 cycles. Dipping III

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PCR Modeling

PCR Modeling. 2004.08.31 MEC Lim Hee Woong. Denaturation. dsDNA conc. input. Melting curve of known DNA conc. Temp. input. K eq output. denaturation efficiency. Released ssDNA conc. output. Melting Profile Sigmoid function assumption Parameters T m : Melting temperature

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A comparative study of mixed irradiated silicon strip sensors

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Effects of annealing on charge collection in heavily irradiated silicon micro-strip detectors

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N. Manna Dipartimento Interateneo di Fisica & INFN di Bari on behalf of the SMART Collaboration*

Study of radiation damage induced by 26MeV protons and reactor neutrons on heavily irradiated MCz, FZ and Epi silicon detectors. N. Manna Dipartimento Interateneo di Fisica & INFN di Bari on behalf of the SMART Collaboration*. (*) INFN sections of Bari, Firenze, Perugia, Pisa;

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Irradiation in Karlsruhe

Irradiation in Karlsruhe. The Karlsruhe-Probestations Procedure of Irradiation Results Future annealing studies. The Probestation. Cold measurements. The Software. Procedure. Measurements of sensors @ 20°C @ rel. humidity < 30% IV & CV Ileak Rpoly (2V) CC (100Hz)

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377 views • 18 slides

An annealing study on 23 GeV proton irradiated n-type MCz pad detectors

7 th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders, CERN, Switzerland, 14-16 November 2005. An annealing study on 23 GeV proton irradiated n-type MCz pad detectors.

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Low-temperature processed zinc tin oxide TFT

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Practice of analysis and interpretation of X-ray diffraction data

Practice of analysis and interpretation of X-ray diffraction data. Power Point presentation from lecture # 2 is available at: http://dl.dropbox.com/u/23622306/UIUC/Lecture%202.ppt. Power Point presentation from lecture # 4 is available at: http://dl.dropbox.com/u/23622306/UIUC/lecture%204.ppt.

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Lecture 9

Lecture 9. State Space Gradient Descent Gibbs Sampler with Simulated Annealing. Continuous Space Gradient Descent. E (a, b, c). Step size l has to be small 0.01 might not work 0.00001 begins to work. State Space Gradient Descent. For each pixel x,y For each possible state S

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Type inversion of Epi-Si and Cz irradiated devices

Type inversion of Epi-Si and Cz irradiated devices. 50 m m thick epi-Si sensors, 50 W cm. CERN scenario experiment. Fixed fluence. protons and neutrons. protons. Points correspond to MAXIMUM of V fd and not to the minimum like in DOFZ devices.

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Major Application: Finding Homologies

Major Application: Finding Homologies. (C) Mark Gerstein, Yale University bioinfo.mbb.yale.edu/mbb452a. AutoSimS. Local two-sequences alignment is the basis of sequence analysis, and perhaps the most widely used tool in computational molecular biology [1]

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PCR (Polymerase Chain Reaction)

PCR (Polymerase Chain Reaction). What Does a PCR do?. Copying machine for specific parts of DNA. Chain rxn. in which DNA template exponentially amplified PCR makes billions of copies of specified DNA segment in few hours No need to screen a DNA library for desired gene.

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Background for AA8006

Background for AA8006. AA8006-O surfaces, as-received or etched, activate by annealing at lower temperatures (350 C) than model binary AlPb alloys Activation is actually reduced by increasing the annealing temperature (Yann) Role of grain size on activation not investigated.

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