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5.5 Transient and A-C Conditions 5.5.1 Time Variation of Stored Charges

5.5 Transient and A-C Conditions 5.5.1 Time Variation of Stored Charges 5.5.2 Reverse Recovery Transient 5.5.3 Switching Diodes 5.5.4 Capacitance of p-n Junctions 5.5.5 The varactor Diode 5.6 Deviations from the Simple Theory 5.6.1 Effect of Contact Potential on Carrier Injection

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391 views • 22 slides

IGBT: Insulated-Gate Bipolar Transistor

IGBT: Insulated-Gate Bipolar Transistor. Combination BJT and MOSFET High Input Impedance (MOSFET) Low On-state Conduction Losses (BJT) High Voltage and Current Ratings Symbol. Cross-Sectional View of an IGBT. Metal. Silicon Dioxide. Metal. IGBT Equivalent Circuit for V GE <V T. + V CC.

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854 views • 15 slides

Chapter 6-2. Carrier injection under forward bias

Chapter 6-2. Carrier injection under forward bias. Last class, we established the excess minority carrier concentration profile under biased conditions.

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422 views • 10 slides

Conclusion(2)

Conclusion(2). Finally, we compared EL IQE with PL IQE. EL IQE was found to be smaller than PL IQE, which indicates that to equilibrate EL and PL IQE, carrier injection ef?ciency and the effect of temperature cannot be ignored. References.

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136 views • 3 slides

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'Carrier injection' diaporamas de présentation

Carrier injection - PowerPoint PPT Presentation

5.5 Transient and A-C Conditions 5.5.1 Time Variation of Stored Charges

IGBT: Insulated-Gate Bipolar Transistor

Chapter 6-2. Carrier injection under forward bias

Conclusion(2)