'Diffusion current' diaporamas de présentation

Fundamentals of Microelectronics

Fundamentals of Microelectronics. CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors CH7 CMOS Amplifiers CH8 Operational Amplifier As A Black Box.

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Semiconductor Devices A brief review

Semiconductor Devices A brief review. Dr. K. Fobelets. Purpose of the course. Study bipolar devices in more detail Diodes and BJTs Closer to reality: recombination What causes the delays in these devices when switching?. The most frequently used sentence in this course will be:.

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BASIC ELECTRONICS

BASIC ELECTRONICS. By MANISH SHARMA. ECE-101F BASIC ELECTRONICS L T P Sessional : 50 Marks 3 0 0 Exam : 100 Marks Total : 150 Marks Duration of Exam : 3 Hrs Note :

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EE210 Digital Electronics Class Lecture 4 April 10, 2008

EE210 Digital Electronics Class Lecture 4 April 10, 2008. Diodes. 2. Home Work No. 2 (Due May 2, 2007) Problem 1.24 Problem 1.30 Problem 1.35 Problem 1.86. In This Class. We Will Discuss Following Topics : Chap 3 Diodes 3.1 The Ideal Diode 3.7 Physical Operation of Diodes

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Outline

Outline. Chap. 1 Introduction Chap. 2 Basics of Semiconductor Physics Chap. 3 P-N Junctions Chap. 4 Metal-Semiconductor Junctions Chap. 5 Semiconductor Heterojunctions Chap. 6 Semiconductor solar cells & Photodiodes Chap. 7 Light Emitting Diodes & Semiconductor Lasers

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Fundamentals of Microelectronics

Fundamentals of Microelectronics. CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors CH7 CMOS Amplifiers CH8 Operational Amplifier As A Black Box.

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Chapter 2

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PN Junction

PN Junction. Section 2.2-2.3. Tentative Schedule. Important Dates. 2/4: Test #1 2/6: Class Canceled!. c02f01. Review. Intrinsic Semiconductor Extrinsic Semiconductor Currents Drift Current Diffusion Current. Not A Whole Lot of Free Electrons at Room Temperature. c02f03. At T=0K.

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ECE 875: Electronic Devices

ECE 875: Electronic Devices. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu. Lecture 40, 18 Apr 14. Chp 06: MOSFETs Aspects of realistic MOSFET operation (n-channel p-substrate) Subthreshold swing: definition 01 example definition 02

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Dnyanasadhana College, Thane .

Dnyanasadhana College, Thane . Department of Chemistry T.Y.B.Sc. Analytical Chemistry Paper-IV Sem-VI polorography Dr.Bhagure G.R. Introduction:

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Announcements

Announcements. HW1 is posted, due Tuesday 9/4 Discussion Section 102 (We 9-10) moved to 289 Cory Lab sections: If a section is over-subscribed, then priority will be given to students officially registered for this section. Paid position for videotaping EE105 lectures is available.

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Lecture 5

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Introduction to electronics (Syllabus)

Introduction to electronics (Syllabus). Course Title: Introduction to Electronics Instructor: Ashraf A. Ali e-mail: ashraf@hu.edu.jo WEB: staff.hu.edu.jo/ashraf Office Hours: Sun , Tue, Thu 12:00-1:00 Lecture Time: Tue, Thu 1:00- 2:00 Lecture Hall E2010.

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Lecture 3

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ECE 874: Physical Electronics

ECE 874: Physical Electronics. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu. Lecture 26, 27 Nov 12 Chp. 05: Recombination-Generation Processes. baseline situation. W. Reverse biassed pn junction:. Ideally in depletion region W: p = n = 0

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Satish Pradhan Dnyanasadhana College, Thane .

Satish Pradhan Dnyanasadhana College, Thane . Department of Chemistry T.Y.B.Sc. Analytical Chemistry Paper-IV Sem-VI Amperometric Titrations By Dr.Bhagure G.R. Contents. 1.3 Amperometric titrations (04L) 1.3.1 Comparison between Amperometry and voltammetry .

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ECE 340 Lectures 16-18 Diffusion of carriers

ECE 340 Lectures 16-18 Diffusion of carriers. Remember Brownian motion of electrons & holes! When E-field = 0, but T > 0, thermal velocity v T = ______ But net drift velocity v d = __________ So net current J d = _________ = __________ What if there is a concentration or

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Chapter 3-2. Diffusion and band bending

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