'Dopant concentration' diaporamas de présentation

Rainer Wallny Silicon Detector Workshop at UCSB May 11th, 2006

Rainer Wallny Silicon Detector Workshop at UCSB May 11th, 2006 Slides ruthlessly stolen from: Paula Collins, CERN Alan Honma, CERN Christian Joram, CERN Michael Moll, CERN Steve Worm, RAL.

693 views • 58 slides

Mathieu Benoit

Occupancy studies for CLIC_ILD inner layer and Update on Digitization : Tuning with data, Lorentz angle effects. Mathieu Benoit. Outline. First results on Occupancy for the inner layer of CLIC_ILD Following design from workshop

465 views • 37 slides

Analytical Network for Nanotech

394 views • 24 slides

Radiation Damage and Leakage Current Measurement in Silicon Detector - Ken Chow 7/21/2003

Radiation Damage and Leakage Current Measurement in Silicon Detector - Ken Chow 7/21/2003. Overview. A little bit on semiconductor physics Overview of P-N junction Radiation Damage in the Silicon detector Leakage Current Some results so far. Contemporary Silicon Detector Modules.

499 views • 19 slides

Lecture #13

274 views • 13 slides

Investigations on Clha and Doped Clha Nanopowders by Mechanochemical Synthesis

Semiconductor nanoparticles hold the potential for making more efficient solar cells. Solid-State lighting using LEDs and phosphor material to generate white light is the current research focus in the lighting industry. The present paper describes the investigations of CLHA and different concentrations of 3d-transition metal ions (Mn2 , Fe3 , Co2 and Cu2 ) doped CLHA nanopowders were prepared by mechanochemical synthesis. In the case of undoped CLHA nanopowder crystallite size is about 16.15 nm, while doping with transition metal ions crystallite size decreases and then increases with increasing dopant concentration. CLHA nanopowders exhibit white emission with the increase of dopant concentration and are useful for W-LEDs and PDPs.

66 views • 6 slides