'Equivalent circuit' diaporamas de présentation

ENERGY CONVERSION ONE (Course 25741)

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EEE 360 Energy Conversion and Transport

EEE 360 Energy Conversion and Transport. George G. Karady & Keith Holbert Chapter 7 Induction Motors. Lecture 18. 7.2 Construction. Induction Motors. The single-phase induction motor is the most frequently used motor in the world

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Investigating the utility of Schwarz-Christoffel mapping theory for electric machine design and analysis

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ECE 4991 Electrical and Electronic Circuits Chapter 3

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Controlled-Rectifier Fed Drive

Controlled-Rectifier Fed Drive. Armature Field. Chopper-Fed Drive. Armature Field. Equivalent Circuit of a Separately-Excited DC Motor. Solve for the motor speed. Control of the motor speed. Control armature voltage, V a Voltage control Control the field current, I f

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Switching-Mode Regulators

Switching-Mode Regulators. Convert an unregulated DC voltage into a regulated DC voltage. Buck Regulator. Output Voltage is Less Than the Input Voltage. BJT Chopper L-C Filter Load.

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COSMIC RAY MUON DETECTION USING SCINTILLATION COUNTER AND WAVELENGTH SHIFTING FIBERS

COSMIC RAY MUON DETECTION USING SCINTILLATION COUNTER AND WAVELENGTH SHIFTING FIBERS. ARUNODAYA BHATTACHARYA VSRP-2009,TIFR,MUMBAI 6/7/09. Topics covered. Motivation Tools used Experimental setup Data collection Analysis of data Results Future Plans. Motivation.

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Bipolar Junction Transistors (BJT)

Bipolar Junction Transistors (BJT). Small Signal Analysis Graphical Analysis / Biasing Amplifier, Switch and Logic Appl. . HW # 2. HW 2 due Friday 3.52, 3.72, 3.66 , 3.98. NPN Transistor Amplifier. Example. NPN. Quiescent point. Small Signal Analysis. BJT as Amplifier.

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Elec467 Power Machines & Transformers

Elec467 Power Machines & Transformers . Electric Machines by Hubert, Chapter 4 Topics: Introduction, Induction-motor action, Reversal of rotation, Construction, Synchronous speed, Slip, Equivalent circuit, locus of current, Air-gap power, Mechanical power, Torque, and Efficiency.

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Lesson 3

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Chapter 7

Chapter 7. characteristics that are electrically the same as another circuit but is generally simpler. Summary. Summary. Combination circuits.

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INTERPOLATED HALFTONING, REHALFTONING, AND HALFTONE COMPRESSION

INTERPOLATED HALFTONING, REHALFTONING, AND HALFTONE COMPRESSION. Prof. Brian L. Evans bevans@ece.utexas.edu http://www.ece.utexas.edu/~bevans Collaboration with Dr. Thomas D. Kite and Mr. Niranjan Damera-Venkata Laboratory for Image and Video Engineering The University of Texas at Austin

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EE 5340 Semiconductor Device Theory Lecture 27 - Fall 2003

EE 5340 Semiconductor Device Theory Lecture 27 - Fall 2003 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc n-channel enhancement MOSFET in ohmic region 0< V T < V G Channel V S = 0 0< V D < V DS,sat E Ox,x > 0 e - e - e - e - e - n+ n+ Depl Reg p-substrate

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RF Dielectric Properties of SiC Ceramic Absorbers for the ARES Cavity

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Power Transformer Models

Power Transformer Models. by Kinlay Dorjee & James Wang. Presentation Outline. Introduction Ideal transformer Practical transformer Conclusion Questions/Discussion. Introduction. Typical power system scheme. Generator. Step up Transformer. Transmission Line. Step down

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Emitter-Coupled Logic

Emitter-Coupled Logic. Dr. T.Y. Chang NTHU EE 2006.11.2. Introduction. Basic Principle The ECL Family D.A. Neamen, Electronic Circuits Analysis And Design, 2nd ed. Chapters 17. Basic Principle. Less susceptible to picked-up noise Common-mode Rejection Const I during switching

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Lecture #27

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ECE 3144 Lecture 21

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Fig. 5.6 The drain current i D versus the drain-to-source voltage v DS for an enhancement-type NMOS transistor op

Fig. 5.1 Physical structure of the enhancement-type NMOS transistor: (a) perspective view; (b) cross section. Typically L = 1 to 10 ? m, W = 2 to 500 ? m, and the thickness of the oxide layer is in the range of 0.02 to 0.1 ? m.

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