'Halide vapor phase epitaxy' diaporamas de présentation

60 nm thick SiO x film was then deposited on the GaN film using an electron beam evaporator

starting substrates were undoped 5 m m thick GaN films grown by hydride vapor phase epitaxy (HVPE) on c -plane sapphire. 60 nm thick SiO x film was then deposited on the GaN film using an electron beam evaporator. 1 m m thick Al film was deposited.

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