'Hfo 2' diaporamas de présentation

Prof. J. Raynien Kwo ???

Advances in Oxide Electronics Research: From High k Gate Dielectrics to Diluted Magnetic Oxides. Prof. J. Raynien Kwo ???. Part I. High k Gate Dielectrics. The Development of Oxide Electronics in Two Decades. Sensors. High T c Superconductors. Optoelectronics Transparent

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outline of presentation research objectives

length scales of order and defects in nano-crystalline and non-crystalline Hf-based high/medium- k gate dielectrics

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recent technology advances

spectroscopic detection of intrinsic defects in nano-crystalline transition metal elemental oxides scales of order (0.5 to 5 nm) for nano- and non-crystalline thins Gerry Lucovsky, NC State University

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ATOMIC-SCALE THEORY OF RADIATION-INDUCED PHENOMENA

ATOMIC-SCALE THEORY OF RADIATION-INDUCED PHENOMENA. OVERVIEW OF THE LAST FIVE YEARS AND NEW RESULTS. Sokrates T. Pantelides Department of Physics and Astronomy, Vanderbilt University, Nashville, TN. The theory team : Leonidas Tsetseris, Matt Beck, Ryan Hatcher, George Chatzisavvas,

571 views • 40 slides

Radiation Effects on Emerging Electronic Materials and Devices

June 14/15, 2007. Radiation Effects on Emerging Electronic Materials and Devices. Radiation Effects in Emerging Materials Overview. Leonard C. Feldman Vanderbilt University Department of Physics and Astronomy Vanderbilt Institute on Nanoscale Science and Engineering. Topics of Interest

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First Principles Studies of Defects in HfO 2 and at Si:HfO 2 Heterojunctions

Ph.D. Dissertation Proposal. First Principles Studies of Defects in HfO 2 and at Si:HfO 2 Heterojunctions. Chunguang Tang ( ? ?? ) (Bachelor Eng.: Univ. Sci. Tech. Beijing) (Master. Sci.: NUS) Chemical, Materials & Biomolecular Engineering Institute of Materials Science

449 views • 31 slides

HRIBF - proton-rich beams

HRIBF - proton-rich beams. Dan Stracener HRIBF Users Workshop November 13, 2009. Outline. Status of proton-rich beams at HRIBF Accelerated beam intensities Targets currently used (what are the limitations?) Enhancements to the quality of p-rich beams at HRIBF

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Radiation Effects on Emerging Electronic Materials and Devices

June 13/14, 2006. Radiation Effects on Emerging Electronic Materials and Devices. Radiation Effects in Emerging Materials Overview. Leonard C. Feldman Vanderbilt University Department of Physics and Astronomy Vanderbilt Institute on Nanoscale Science and Engineering. Gate. oxide. Si.

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Effect of post processes on characteristics of SSG dielectrics

Effect of post processes on characteristics of SSG dielectrics. Experiment. << Original process >>. << Modified process >>. Dipping I (Precursor adsorption). Dipping I (Precursor adsorption). Dipping II (Washing). Dipping II (Washing). 10 cycles. 10 cycles. Dipping III

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Novel high-k materials Can we nominate candidates for the 22 and the 16 nm nodes?

Novel high-k materials Can we nominate candidates for the 22 and the 16 nm nodes?. Olof Engstrom Chalmers University of Technology Paul Hurley Tyndall National Institute Octavian Buiu University of Liverpool Max Lemme AMO. Outline. Why high-k? Essential properties needed

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Simulations of sub-100nm strained Si MOSFETs with high- ? gate stacks

Simulations of sub-100nm strained Si MOSFETs with high- ? gate stacks. Lianfeng Yang , Jeremy Watling * , Fikru Adamu-Lema , Asen Asenov and John Barker Device Modelling Group, University of Glasgow Tel: +44-141-330 5343 Fax: +44-141-330 4907 Email: j.watling@elec.gla.ac.uk.

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Simulations of sub-100nm strained Si MOSFETs with high- ? gate stacks

Simulations of sub-100nm strained Si MOSFETs with high- ? gate stacks. Lianfeng Yang , Jeremy Watling * , Fikru Adamu-Lema , Asen Asenov and John Barker Device Modelling Group, University of Glasgow Tel: +44-141-330 5343 Fax: +44-141-330 4907 Email: j.watling@elec.gla.ac.uk.

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Radiation induced charge trapping in ultra-thin HfO 2 based MOSFETs

Radiation induced charge trapping in ultra-thin HfO 2 based MOSFETs. S.K. Dixit 1, 2 , X.J. Zhou 3 , R.D. Schrimpf 3 , D.M. Fleetwood 3,4 , S.T. Pantelides 4 , G. Bersuker 5 , R. Choi 5 , and L.C. Feldman 1, 2, 4 1 Interdisciplinary Materials Science Program

377 views • 20 slides

Gennadi Bersuker

Reliability assessment for new materials: Generation and activation of electrical defects in high-k gate stacks. Gennadi Bersuker. Dielectric degradation: multilayer gate stack. - Defect location : in high-k or IL? Defect origin : intrinsic or process-related?

362 views • 19 slides

Gennadi Bersuker

Reliability assessment for new materials: Generation and activation of electrical defects in high-k gate stacks. Gennadi Bersuker. Dielectric degradation: multilayer gate stack. - Defect location : in high-k or IL? Defect origin : intrinsic or process-related?

357 views • 19 slides

Ion Beam Analysis of the Composition and Structure of Thin Films

Ion Beam Analysis of the Composition and Structure of Thin Films. Torgny Gustafsson, Physics and Eric Garfunkel, Chemistry and Chemical Biology. Experimental Details.

362 views • 18 slides

Hf impurities in Si/SiO 2 /HfO 2 stacks

Hf impurities in Si/SiO 2 /HfO 2 stacks. Apostolos Marinopoulos 1. Xing Zhou 3 Sasha Batyrev 1 Ronald Schrimpf 3 Daniel Fleetwood 3 Sokrates Pantelides 1,2. Klaus van Benthem 2 Sergey Rashkeev 1,2,4 Stephen Pennycook 2,1.

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JOHN G. EKERDT

JOHN G. EKERDT. RESEARCH OBJECTIVES. We study the surface and materials chemistry of metal and dielectric films and silicon nanostructures, and catalytic chemistry of biomass conversion. Our work seeks to:

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Total Dose Response of HfO 2 /Dy 2 O 3 on Ge and Hf 0.6 Si 0.2 ON 0.2 on Si MOS Capacitors

Total Dose Response of HfO 2 /Dy 2 O 3 on Ge and Hf 0.6 Si 0.2 ON 0.2 on Si MOS Capacitors. D. K. Chen, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, A. Canals Department of Electrical Engineering and Computer Science, S. T. Pantelides, Department of Physics

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V. Results

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