'Short channel effects' diaporamas de présentation

Solid State Electronics

2.42k views • 141 slides

Michael Aquilino Microelectronic Engineering Department Rochester Institute of Technology

Development of a Deep-Submicron CMOS Process for Fabrication of High Performance 0.25 ? m Transistors. Michael Aquilino Microelectronic Engineering Department Rochester Institute of Technology April 21, 2005. Motivation.

1.05k views • 72 slides

Alain Espinosa Thin Gate Insulators

Nanoscale Silicon Technology. Presenters Topics. Mike Duffy Double-gate CMOS. Eric Dattoli Strained Silicon. Alain Espinosa Thin Gate Insulators. Challenges as CMOS feature sizes decrease. Carrier Mobility reduction Threshold voltage (V T ) control reduction

865 views • 51 slides

Novel dual- V th independent-gate FinFET circuits

Novel dual- V th independent-gate FinFET circuits. Masoud Rostami and Kartik Mohanram Department of Electrical and Computer Engineering Rice University, Houston, TX. Outline. Introduction and motivation Background Dual- V th independent-gate FinFETs Logic design Simulation results

731 views • 42 slides

EE 4345 Chapter 6

EE 4345 Chapter 6. Derek Johnson Michael Hasni Rex Reeves Michael Custer. Capacitors in IC design. Coupling AC Signals Constructing timing networks Constructing phase shift networks Feedback loop compensation. Semiconductors use:. Parallel Plate Capacitor.

550 views • 39 slides

EE 4345 Chapter 6

EE 4345 Chapter 6. Derek Johnson Michael Hasni Rex Reeves Michael Custer. Capacitors in IC design. Coupling AC Signals Constructing timing networks Constructing phase shift networks Feedback loop compensation. Semiconductors use:. Parallel Plate Capacitor.

490 views • 39 slides

Leakage Power Reduction Techniques

Leakage Power Reduction Techniques. Yuanlin Lu ECE Dept. Auburn University ELEC 6970. Outline. Transistor Leakage Mechanisms Leakage Reduction techniques - Mutli-, dual-, Variable Vth - Dual Power Supply - Transistor Sizing - Transistor Stacking - Optimal Input Vector Selection

729 views • 38 slides

MOSFET

Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson. MOSFET. History Structure Review Future Threshold Voltage I-V Characteristics Modifications to I-V: Depletion layer correction (Sup. 3) Mobility, Vsat Short Channel Effects

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Design of High-k Dielectric Gate Stacks for Nanoscale MOSFET

University of Illinois Urbana-Champaign Mohamed Mohamed Electrical Engineering. Design of High-k Dielectric Gate Stacks for Nanoscale MOSFET. Compare and design High-k Dielectric and gate stack using SiO 2

868 views • 27 slides

FinFET

FinFET. Qin Zhang EE 666 04/19/2005. Outline. Introduction Design Fabrication Performance Summary. Introduction. Double-gate FET (DGFET) can reduce Short Channel Effects (SCEs) Reduce Drain-Induced-Barrier-Lowering Improve Subthreshold Swing S.

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First-Time User Guide to MOSFET V1.2.2

First-Time User Guide to MOSFET V1.2.2. Saumitra Mehrotra*, Ben Haley, Gerhard Klimeck Network for Computational Nanotechnology (NCN) Electrical and Computer Engineering * http://nanohub.org/resources/ mos fet smehrotr@purdue.edu. Table of Contents. Introduction

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EECS 312 Discussion 3

EECS 312 Discussion 3. 09/20 Shengshuo Lu (luss@umich.edu). Overview. Reminder HW 1: Due Sep 24 Diode Transistors. Diode. G. S. D. Diode. Diode. Built-in Potential Depletion Region Width. Diode Current. Diffusion capacitance. NMOS. G. S. D. Threshold Voltage.

352 views • 14 slides