1 / 1

PIDS Major Revision for 2009 Logic:

PIDS Major Revision for 2009 Logic: Add p-MOSFET performance (n-channel/p-channel Isat and cap ratios). Add ring-oscillator delays (FO=1 & FO=3 or 4, in addition to CV/I ). Racc specs tightened (35% Isat degradation as opposed to 40-50%). Ioff = 100 nA/um (as opposed to 200-700 nA/um). NVM:

taji
Télécharger la présentation

PIDS Major Revision for 2009 Logic:

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. PIDS Major Revision for 2009 Logic: • Add p-MOSFET performance (n-channel/p-channel Isat and cap ratios). • Add ring-oscillator delays (FO=1 & FO=3 or 4, in addition to CV/I). • Racc specs tightened (35% Isat degradation as opposed to 40-50%). • Ioff = 100 nA/um (as opposed to 200-700 nA/um). NVM: • NAND half-pitch, pull in1year from ITRS 2008, i.e. 32 nm in 2010. • FG-CTF transition in 2012, delay 2 years. 3D-CTF in 2014, delay 1year. • 3 bit–4bit/cell transition delays 2 years (2012). • NOR Flash survey on-going. • Add STT MRAM. DRAM: • Cell factor–4F2 cell in 2011. Reliability: (New Sub-Group lead) • Major correction in the reliability requirement specifications. • Increase emphasis on circuit impact of device reliability issues. • Bring up the need for paradigm change and the challenge involved. • ddd

More Related