Updates to NanoFab Trainer: User Interface Enhancements and New Code Features
On January 17, 2014, several updates were made to the NanoFab Trainer, improving the user interface and various code functionalities. Key updates include the addition of a "Save As" option and improved dialog responsiveness to keyboard and mouse input. Notable changes to the Wet Etch and Spin Coat code fixed several issues, including photoresist "spikes." Sputter Look-Up Tables (LUTs) were revised to accurately reflect deposition rates for various materials. A comprehensive to-do list was established for further enhancements and feature implementation.
Updates to NanoFab Trainer: User Interface Enhancements and New Code Features
E N D
Presentation Transcript
NanoFabTrainer Update Nick Reeder, January 17, 2014
Updates to User Interface • Uploaded Andrew’s seventeen PDF-file chapters to the Tutorial page, and sent list of possible typos to Andrew. • File menu now has distinct Save As… and Save options. • Window’s title bar shows filename. • Buttons in dialog boxes respond to key presses as well as mouse clicks. • Partially implemented Jamshid’s suggestion to make graphs more easily accessible.
Updates to Wet Etch Code • Etched edges of masked SiO2 are now tapered instead of vertical.
Updates to Spin Coat Code • Fixed problem of photoresist “spikes” reported in November by Jamshid’s student Chico.
Updates to Sputter LUTs • Updated the sputter look-up tables to include the deposition rates (for Ag, Al, Al203, Cr, Cu, Ge, Ti, SiO2) that Andrew sent on March 6, 2013. • Still need sputter data for Au, Ni, Pt, W, Si3N4, Ta2O5, TiO2, Si. • In many cases, rejected some of the original numbers as outliers or because they were inconsistent with linear interpolation from other numbers. • See following slides.
To-Do List • Implement look-up tables to compute deposition rates forCVDbased on user-supplied pressure & temperature. • Populate evaporation look-up tables with values. • Populate sputter look-up tables for Au, Ni, Pt, W, Si3N4, Ta2O5, TiO2, Si. • Fix expose,develop, polish code to compute depth from user-supplied values. • Continue writing bake code; need realistic values for S0 and . • In expose code, implement diffraction of UV in air and absorption within resist, with dependence on solvent content from bake code. • Fix etch code so that (for photoresist) etch rates depend on solvent content from bake code. • Fix spin-coat code so that resist does not adhere to underside of horizontal surfaces. • Write new code for • Lift-off • Clean • Profilometer • Write time-cost-quality code for all operations. • Write online help text. • Produce videos for Videos tab.