1 / 2

Optimization of BFM (Ba2FeMoO6) Synthesis for Enhanced Magnetoresistance Memory Applications

This study explores the synthesis of Ba2FeMoO6 (BFM) using solid-state reaction techniques, focusing on optimizing calcination in both air and reducing atmospheres (Ar/H2). We examine the current status of BFM's application in memory devices, leveraging magnetoresistance properties. High-Temperature X-ray Diffraction (HTXRD) is utilized for phase identification and determination of transition temperatures under various sintering conditions. The experimental procedures involve different gas atmospheres: air, Ar/H2, and their combinations, revealing insights into optimizing BFM's properties for memory applications.

tien
Télécharger la présentation

Optimization of BFM (Ba2FeMoO6) Synthesis for Enhanced Magnetoresistance Memory Applications

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. BFM (Ba2FeMoO6) in Ar:H2 Application – Memory using magnetoresistance Solid state reaction Current status – Optimizing the process Experimental procedure calcination in air and reducing atmosphere (Ar/H2) - (HT)XRD: phase identification, transition temperature - sintering in air and reducing atmosphere (Ar/H2) - (HT)XRD: phase identification, transition temperature cal-sin: 1.air-air 2.air-Ar/H2 3.Ar/H2-air, 4.Ar/H2-Ar/H2

  2. BFM in Ar:H2

More Related