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Georgian Technical University

The study explores the effects of pulse-photon irradiation on plasma anodized oxide films of silicon, essential for modern nanoelectronic devices. Traditional dielectric layer formation occurs at high temperatures (1150°C), leading to undesirable impurity diffusion, increased porosity, and reduced adhesion. Pulse-photon annealing offers a solution by operating at lower temperatures (<600°C) within brief time frames. This project aims to optimize various process parameters, including photon spectrum and intensity, to enhance the electrophysical properties while mitigating high-temperature drawbacks.

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Georgian Technical University

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  1. Georgian Technical University Study of influence of pulse-photon irradiation on parameters of plasma anodized oxide films of Silicon Tamar Leshkashvili Email:Tamar.leshkashvili@gmail.com

  2. Topicality of the subject One of the main elements of some modern nanoelectronic devices is an super-thin dielectric layer (5-50 nm). Standard technology of formation of dielectric layers is a high-temperature process at 1150°C. At these temperatures, a diffusion of undesirable impurities, an increase in porosity, deterioration of adhesion with a substrate and other processes take place in a dielectric. This is highly unacceptable for structures of nano-dimensions. Also, after ending up the process electrophysical properties of derived oxides normally improve with high temperature treatment which is not desirable due to above-mentioned shortcomings.

  3. Fig.1. The schematic of plasma anodes Anode Cathode Target contact Sample Plasma holder Thermocouple output Ultraviolet irradiation source Sample heater Cover

  4. Goal Pulse-photon annealing allows lowering these temperatures (the pulse duration with a few seconds and the temperature less than 600°C). Therefore it is essential to study optimal regimes of the process and determining photon spectrum, intensity of irradiation, length of pulse, geometry and so on. which constitutes the main aim of the project. timp= few seconds, T≤6000C

  5. Study methods • Volt-Farad (C-V) and Volt-Amper (V-A) characteristics; • Charge and dielectric constant in the oxide; • Leaking currents and breakdown voltages in the oxide; • Oxide thickness and work function;

  6. Thank you for the attention ! Tamar Leshkashvili

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