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Presented by: Salim Berrada

Graphene NanoMesh Field Effect Transistors (GNM-FETs). Presented by: Salim Berrada. What’s a GNM?. Elementary ribbon. W. Transistor Model. I D -V GS For all GNM at V DS =0,2V. I D -V G at V DS = 0.2V . Effective masses comparison. E G =553. E G =508. E G =268.

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Presented by: Salim Berrada

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  1. GrapheneNanoMesh Field Effect Transistors (GNM-FETs) Presented by: SalimBerrada Team Meeting

  2. What’s a GNM? Elementaryribbon W http://computational-electronics.ief.u-psud.fr/

  3. Transistor Model http://computational-electronics.ief.u-psud.fr/

  4. ID-VGS For all GNM at VDS=0,2V

  5. ID-VG at VDS = 0.2V

  6. Effective masses comparison EG=553 EG=508 EG=268

  7. GNM with EG=508meV

  8. ID-VGS

  9. Contribution of Different Currents

  10. Current Spectra at Dirac Point (VGS=0,2V) for VDS=0,2V

  11. Results Analysis

  12. Graphene Band structure

  13. Dirac Point UD US UG

  14. Recall the band structure…

  15. Qy= 0.02 UD US UG

  16. Qy= 0.04 UD US UG

  17. Comparision with Viet-Hung’s Code

  18. APPENDIX

  19. Pristine Graphene

  20. Pristine Graphene ID-VGS

  21. Pristine Graphene: Currents Contrubution Analysis

  22. GNM 1 et 3

  23. EG=268 meV EG=553 meV

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