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ALD at Georgia Tech IEN

ALD at Georgia Tech IEN. John Pham johnpham@gatech.edu. Cambridge Nanotech Fiji F202 ALD. Dual chamber Right : oxides/nitrides Left : metals (& oxides backup) Plasma/Thermal 300W / up to 500C (chuck) Manual load-lock 10 precursor ports Oxides: Al 2 O 3 HfO 2 ZrO 2 ZnO TiO 2

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ALD at Georgia Tech IEN

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  1. ALDat Georgia Tech IEN John Pham johnpham@gatech.edu

  2. Cambridge NanotechFiji F202 ALD • Dual chamber • Right: oxides/nitrides • Left: metals (& oxides backup) • Plasma/Thermal • 300W / up to 500C (chuck) • Manual load-lock • 10 precursor ports • Oxides: Al2O3 HfO2 ZrO2 ZnO TiO2 • Nitrides: TiN AlN HfN ZrN • Metal: Pt Fig 1. Plasma ALD, installed Aug 2010

  3. Home-built thermal ALD Fig 2. Home-built ALD Fig 3. Internals of ALD

  4. Home-built thermal ALD • Chamber easily disassembled • <$15k, 2 days to assemble • Reduced cross-contamination • Al2O3 available only • Up to 250C • Viton lid o-ring • Stainless steel chamber • Up to 4 precursors Fig 4. Touchscreen Interface

  5. User Activity • Aug 2010-Nov 2012: • 92 unique users • 9,000+ hrs • Oxide/nitride chamber heavily used • Metals chamber, not so much • ALD2 for instructional center • hands-on fabrication classes • ALD1 for Al2O3 • No cross contamination (only TMA/H2O installed)

  6. Applications of ALD @ GT • Gate dielectric • Nano-porosity size reduction • ALD on Graphene • Environmental barrier for organic electronics • Polymer solar cells • OLEDs • Anti-reflective coating • Nano-generator (ZnO on CNT) Fig 5. Porous grid for PZT nano pillar fabrication Fig 6. 20nm ZnO on individual CNT. CNT is indicated by arrows. Component of nano-generator.

  7. Hardware Issues • Chuck temperature cooling • Slow (250C to 100C) • Cross-contamination • Gate dielectrics (contaminated by other nitrides and possibly ZnO) • Manual load-lock operation • Metal ALD precursor • Cost, availability, nucleation delay Fig 7. Heated Chuck Fig 8. Manual load-lock

  8. QUESTIONS?

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