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Cathode R&D 03/15/06

Cathode R&D 03/15/06. Saxet project: Bulk GaAs sample #38 (10 19 cm -3 doping) with 50 m m/50 m m lines/spacing grid was tested. Lines are 30nm W and 100nm Au. Behavior was different than previous samples

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Cathode R&D 03/15/06

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  1. Cathode R&D 03/15/06 Saxet project: Bulk GaAs sample #38 (1019cm-3 doping) with 50mm/50mm lines/spacing grid was tested. Lines are 30nm W and 100nm Au. Behavior was different than previous samples Sample with thin GaAs active region and 5×1014cm-3 doping and same grid just arrived. Bulk GaAs samples with W only ~50nm tall lines are coming

  2. Sample #38 I-V curve

  3. Sample #38, QE vs bias

  4. Sample #38, Polarization vs bias

  5. Conclusions • Modeling bias effect on polarization based on Schottky junction formed at the surface if results are encouraging. • We need to investigate the effect of the height of the lines on qe and polarization, i.e. scattering, absorption etc. • An offset Ta cap will be used to investigate the bias distribution at the surface

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