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Graphene-Insulator-Graphene Active THz Devices Berardi Sensale-Rodriguez

Graphene-Insulator-Graphene Active THz Devices Berardi Sensale-Rodriguez. Discovery : Graphene-based plasmonic structures composed of graphene-insulator-graphene can provide gain at THz frequencies due to interplay between plasmons and resonant-tunneling.

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Graphene-Insulator-Graphene Active THz Devices Berardi Sensale-Rodriguez

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  1. Graphene-Insulator-Graphene Active THz Devices Berardi Sensale-Rodriguez Discovery: Graphene-based plasmonic structures composed of graphene-insulator-graphene can provide gain at THz frequencies due to interplay between plasmons and resonant-tunneling. Approach: Developed DC model of the structure based on quantum phenomena, a transmission line equivalent model and device analysis employing microwave circuit design techniques. Results and Significance: Demonstrated that graphene-insulator-graphene structures can provide stable power gain (>7dB) at THz frequencies ( f > 2 THz), which is well above the fT of traditional high frequency electronic devices. The achievable power gain in these structures can surpass what is possible in RTD gated-HEMT structures employing traditional semiconductors. Left: High frequency model of a gated graphene-insulator-graphene structure; the device can be represented as an active transmission line . Right: Transducer power gain as a function of frequency in amplifier configuration; design for maximum stable gain at 2 THz. Applied Physics Letters 103, 123109 (2013) Principal Investigators: Anil Virkar, Ajay Nahata & Brian Saam NSF DMR 11-21252; www.mrsec.utah.edu

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