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Measurements on L2 Test Structures

D0 RunIIb Silicon. Measurements on L2 Test Structures. Sergey Korjenevski Christopher Borjas Kansas State University February 6, 2003. Outline. Visual Inspection of L2 sensors Interstrip and coupling capacitance on Test Structures Resistance on Test Structures Interstrip

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Measurements on L2 Test Structures

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  1. D0 RunIIb Silicon Measurements on L2 Test Structures Sergey Korjenevski Christopher Borjas Kansas State University February 6, 2003

  2. Outline • Visual Inspection of L2 sensors • Interstrip and coupling capacitance on Test Structures • Resistance on Test Structures • Interstrip • Implant, Dielectric and Aluminum • Rpoly on baby detector and on Array • New software and switching matrix • Offset

  3. Found broken implant Visual inspection

  4. Capacitance • Interstrip capacitance measured on Test Structures • Consistent and within specs < 1.2 pF/cm at 1kHz

  5. Coupling Capacitance • Coupling capacitance on Baby Detector with NO Rpoly • Does not depend on Vbias

  6. Coupling Capacitance Breakdown • Coupling capacitance breaks down at about 200V

  7. Interstrip Resistance • Interstrip Resistance drops to KOhms at about 2.5V • Same behavior even if the two strips not next one to • another Low current, high noise but definitely a few GOhms

  8. Implant, Polysilicon, Dielectric • R implant = 1.78 MOhm • R diel ~ 2GOhm • R Al ~ 1 KOhm isolated strip • Polysilicon: • on array 1.0 Mohm • on 2 DC int = 0.8 Mohm • on Bias to DC int = 0.73 Mohm • on 2 DC readout (assume Rimplant constant) from 0.5 Mohm • down to negative • on Bias to DC readout (standard test) from 0.16 Mohm to negative • Interstrip resistance alternative test • R(neighbor DCint to DCreadout) – R(far most DCint to Dcreadout) • about 1 MOhm

  9. Implant, Polysilicon, Dielectric Array: Baby without Rpoly: Baby with Rpoly: DC intermediate DC readout

  10. Last Slide • Visual inspection maybe performed before and after testing. For instance open strip detection could be confirmed visually. • Interstrip resistance drops from few Gohms to Kohms at 2.5V. • PolySi resistor value setup could be changed (use of DCint). Rpoly consistency test should probably stay.

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