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Solid solubility in silicon

Solid solubility in silicon. C. Cs. t 2. t 1. D= Diffusion coefficient (cm 2 /s) t=time (s). Basic diffusion Constant surface-concentration t=0 C(x,0)=0 boundary conditions: C(0,t)=Cs where Cs=surface-concentration (cm -3 ) C( ,t)=0 ”at large depth”. t 2 >t 1. x.

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Solid solubility in silicon

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  1. Solid solubility in silicon

  2. C Cs t2 t1 D= Diffusion coefficient (cm2/s) t=time (s) • Basic diffusion • Constant surface-concentration t=0 C(x,0)=0 boundary conditions: C(0,t)=Cs where Cs=surface-concentration (cm-3) C(,t)=0 ”at large depth” t2>t1 x

  3. Constant dose (quantity) boundary conditions : x=0 lead to S= dopants per surface unit (cm-2) t increase, Cs decrease Cs ! C t1 t2>t1 Equal Area below the curves t2 x

  4. Diffusion coefficient T= temperature in Kelvin k=8.61710-5 (eV/K) ”Boltzmans-constant” Ea= activation energy (eV) D0= Diffusion coefficient extrapolated for infinity temperature D is the intrinsic diffusion coefficient and is valid when C<ni ni=intrinsic charge carrier concentration for a specified temperature. When C>=ni then D is extrinsic diffusion

  5. Graf: Intrinsisk ladningsbärrar konc. Graf: Intrinsisk diffusivitet Graf: Erfc och exp fkn.

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