1 / 17

A Novel Chopping-Spinning MAGFET Device Vincent FRICK , Huy Binh NGUYEN and Luc HEBRARD

A Novel Chopping-Spinning MAGFET Device Vincent FRICK , Huy Binh NGUYEN and Luc HEBRARD vincent.frick@iness.c-strasbourg.fr. A Novel Chopping-Spinning MAGFET Device Vincent FRICK , Huy Binh NGUYEN and Luc HEBRARD vincent.frick@iness.c-strasbourg.fr. Outline. Introduction on MAGFET

Télécharger la présentation

A Novel Chopping-Spinning MAGFET Device Vincent FRICK , Huy Binh NGUYEN and Luc HEBRARD

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. A Novel Chopping-Spinning MAGFET Device Vincent FRICK,Huy Binh NGUYEN and Luc HEBRARD vincent.frick@iness.c-strasbourg.fr A Novel Chopping-Spinning MAGFET Device Vincent FRICK,Huy Binh NGUYEN and Luc HEBRARD vincent.frick@iness.c-strasbourg.fr

  2. Outline Introduction on MAGFET Novel Device’s Principle Experimental Results Conclusions and outlook

  3. MAGFET device Plan • Introduction on MAGFET • Novel Device’s Principle • Experimental Results • Conclusions and outlook W/2 W/2 B L W

  4. Characteristics Pros High sensitivity (optimization possible) Fully compatible with CMOS technology Amplifier input stage Cons Offset 1/f noise =poor resolution Plan • Introduction on MAGFET • Novel Device’s Principle • Experimental Results • Conclusions and outlook

  5. Improvement Plan • Introduction on MAGFET • Novel Device’s Principle • Experimental Results • Conclusions and outlook • Spinning current ? • Only for Hall plates (Hall effect) • Current lines deflection in our case • Chopper stabilization ? • Impossible to swap the “input” signal (intrinsic) • Chopping-Spinning !

  6. Novel Device’s Structure Plan • Introduction on MAGFET • Novel Device’s Principle • Experimental Results • Conclusions and outlook

  7. Chopping-Spinning Principle Plan • Introduction on MAGFET • Novel Device’s Principle • Experimental Results • Conclusions and outlook

  8. Signal conditioning Plan • Introduction on MAGFET • Novel Device’s Principle • Experimental Results • Conclusions and outlook

  9. Amplifying and Output stage Plan • Introduction on MAGFET • Novel Device’s Principle • Experimental Results • Conclusions and outlook • Differential stage gain • Known issues • Limited gain optimization possibilities • Current output: 1/f noise in T-gates Device geometry dependency

  10. Prototype circuit Plan • Introduction on MAGFET • Novel Device’s Principle • Experimental Results • Conclusions and outlook AMS 0.35µm technology MAGFET size: 25x25 µm

  11. Sensitivity and linearity Plan • Introduction on MAGFET • Novel Device’s Principle • Experimental Results • Conclusions and outlook gate voltage Sensitivity: up to 4mA/T

  12. Sensitivity and linearity Plan • Introduction on MAGFET • Novel Device’s Principle • Experimental Results • Conclusions and outlook Linearity: 0.9998 %

  13. Noise performance and resolution Plan • Introduction on MAGFET • Novel Device’s Principle • Experimental Results • Conclusions and outlook

  14. Noise performance and resolution Plan • Introduction on MAGFET • Novel Device’s Principle • Experimental Results • Conclusions and outlook Without chopping-Spinning

  15. Noise performance and resolution Plan • Introduction on MAGFET • Novel Device’s Principle • Experimental Results • Conclusions and outlook With chopping-Spinning 56µT resolution

  16. Conclusions and outlook Plan • Introduction on MAGFET • Novel Device’s Principle • Experimental Results • Conclusions and outlook • Novel device • Simple MOSFET based geometry • Highly linear • Promising performances • Improvements • Geometry • Use as active load in differential stage • Larger T-gates: less 1/f noise

  17. Thank you ! 14th of December 2010 17

More Related