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Process Technology

Process Technology. Sang-Uk Ahn Process Technology Development. Major Process Modules. Isolation (Shallow Trench). Twin Well (Retrograde). Transistor Formation. Multi-level Metallization. Process Feature. Process Feature (cont.). Design Rule. Device Performance. PO NIT. PO OX. MET 5.

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Process Technology

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  1. Process Technology Sang-Uk Ahn Process Technology Development

  2. Major Process Modules Isolation (Shallow Trench) Twin Well (Retrograde) Transistor Formation Multi-level Metallization

  3. Process Feature

  4. Process Feature (cont.)

  5. Design Rule

  6. Device Performance

  7. PO NIT PO OX MET 5 GATE IMD 4 VIA 4 MET 4 Poly DRAIN SOURCE IMD 3 P+ P+ VIA 3 MET 3 N-well IMD 2 VIA 2 MET 2 IMD 1 VIA 1 MET 1 PMD OX CONT ISO OX Pwell Contact NWELL P-ch transistor N-ch transistor Nwell Contact PWELL SUBSTRATE Cross Sectional View - Stacked Via aa XXXXC07 Process

  8. Transistor Structure PETEOS HSQ Metal 1

  9. 0.64 um IMD Profile PETEOS HSQ Metal 1 Metal 1 CD : 0.32 um @ Structure : Ti/TiN/Al-Cu/TiN

  10. Construction Analysis ( SRAM Cell : Stacked Via ) IMD3 Metal 3 stack SOG Via2 IMD2 Metal 2 stack SOG Via1 IMD1 SOG Metal 1 stack W-C/T PMD Tr.

  11. SEM Cross Sectional View- Stacked Via

  12. Rule Based OPC • Correct the specific features • according to the rules OPC Implementation • Purpose • To compensate proximity effect of wafer processing • Model Based OPC • Impose an inverse distortion • to cancel the proximity effect

  13. Model Based OPC Rule Based OPC Layout w/ Model Based OPC Layout w/ Rule Based OPC OPC Example

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