'Source drain' diaporamas de présentation

High-Performance Schottky Barrier MOSFET

High-Performance Schottky Barrier MOSFET. Horng-Chih Lin Department of Electronics Engineering & Institute of Electronics National Chiao Tung University September 19, 2005. Outline. Background Low ? B Source Field-induced Drain (FID) Structure Non-Si Channel Materials

1.24k views • 53 slides

Technology Development & Design for 22 nm InGaAs/InP-channel MOSFETs

665 views • 42 slides

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. Manufacturing Process. July 30, 2002. CMOS Process. A Modern CMOS Process; Think ! ; Why 1)dual well, 2)trench, 3)LDD (Lightly-Doped Drain), 4)TiSi2 ?.

641 views • 42 slides

Topic 4: Digital Circuits

Topic 4: Digital Circuits. (Integrated Circuits Technology). What is on the agenda?. Introduction Basic Operational Characteristics and Parameters of Integrated Circuits CMOS Technology Bipolar Technology Some Practical considerations. 1. Introduction.

828 views • 37 slides

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. Manufacturing Process. July 30, 2002. CMOS Process. A Modern CMOS Process. Dual-Well Trench-Isolated CMOS Process. Circuit Under Design. Its Layout View. The Manufacturing Process.

570 views • 36 slides

Microlectronics 2

Electrical Engineering 2. Lecture 12. Microlectronics 2. Dr. Peter Ewen. (Room G08, SMC; email - pjse). electron hole. I llumination h ? > E g. E. p. n. - +. Fig. 67: Schematic structure of the photodiode. electron drift flow. hole drift flow. W. Depletion Region.

420 views • 35 slides

III-V MOSFETs: Scaling Laws, Scaling Limits,Fabrication Processes

2010 Conference on Indium Phosphide and Related Materials, June 2-4, Takamatsu, Japan. III-V MOSFETs: Scaling Laws, Scaling Limits,Fabrication Processes. Mark. Rodwell, University of California, Santa Barbara.

492 views • 33 slides

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective. Manufacturing Process. July 30, 2002. CMOS Process. A Modern CMOS Process. Dual-Well Trench-Isolated CMOS Process. Circuit Under Design & Layout View. Photo-Lithographic Process. optical. mask. oxidation. photoresist.

527 views • 33 slides

Tutorial 8

Tutorial 8. Derek Wright Wednesday, March 9 th , 2005. Logic Devices. Ferroelectric FETs Resonant Tunneling Quantum Devices Single-Electron Devices Carbon Nanotubes. FeFETs. Structure similar to a MOSFET Substrate with source/drain, dielectric, gate Dielectric has magnetic dipoles

509 views • 32 slides

Manufacturing Process I

428 views • 28 slides

Manufacturing Process I

434 views • 28 slides

Manufacturing Process I

489 views • 28 slides

6.5.8 Equivalent circuit for the MOSFET

6.5.8 Equivalent circuit for the MOSFET. Parasitic elements in the MOSFET equivalent circuit. Capacitance The gate capacitance C i is the sum of the distributed capacitance from the gate to the source end of the channel (C GS ) and the drain end (C GD ).

703 views • 25 slides

The Nanofab Group

661 views • 24 slides

Topics

Topics. Basic fabrication steps. Transistor structures. Basic transistor behavior. Latch up. Fabrication processes. IC built on silicon substrate: some structures diffused into substrate; other structures built on top of substrate.

368 views • 22 slides

Topics

Topics. Basic fabrication steps. Transistor structures. Basic transistor behavior. Latch up. Fabrication processes. IC built on silicon substrate: some structures diffused into substrate; other structures built on top of substrate.

274 views • 21 slides

InGaAs MOSFET with self-aligned Source/Drain by MBE regrowth

281 views • 16 slides

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. Manufacturing Process. July 30, 2002. CMOS Process. A Modern CMOS Process. Dual-Well Trench-Isolated CMOS Process. Circuit Under Design. Its Layout View. The Manufacturing Process.

268 views • 15 slides

MOSFET: Subthreshold Operation

MOSFET: Subthreshold Operation. Professor Paul Hasler. MOSFET Channel Picture. MOS Capacitor Picture. MOSFET Channel Picture. MOSFET Channel Picture. Calculation of Drain Current. 2. d. n. No recombination . =. D n = Ax + B. D n. 0. 0. 0. 2. 0. dx. D. 2. dn. d. n. =. +.

843 views • 13 slides

Previous week Microgap patterning Photolithography - 4000rpm 40s spin-coating

Previous week Microgap patterning Photolithography - 4000rpm 40s spin-coating - 90C 1min soft baking - 3min UV irradiation - 90C 1min hard baking ~10um gap is defined After AZO etching, PR is peeled off Suspection : Poor adhesion of photoresist. Before etching. After etching.

357 views • 6 slides