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ON Semiconductor

ON Semiconductor. Solution For Portable Customer. Q 3 04. BU Contact (AP) : Analog Product : KH Ho / Manson Chan Marketing Manager, Analog BU, Asia Pacific Integrated Power : WK Liew / Winnie Chen / Kenneth NG Marketing Manager, IPDD BU, Asia Pacific.

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  1. ON Semiconductor Solution For Portable Customer Q304 BU Contact (AP) : Analog Product : KH Ho / Manson Chan Marketing Manager, Analog BU, Asia Pacific Integrated Power: WK Liew / Winnie Chen / Kenneth NG Marketing Manager, IPDD BU, Asia Pacific

  2. ON Solutions for Cellular Phones Baseband (DSP, MCU & Memory) Package Roadmap RF/IF Power Management Display RF Detector LDO DC-DC Buck Boost Flash Light Audio Amplifier FET PA Driver LED Driver uP Reset Supervisory USB & SIM Interface Charge Pump RF Modulation Physical Interface PA Microphone Duplexer Synthesizer Voltage Detector Driver / Load Switch PM ASIC Handset/Receiver Receiver Vibrator MiniGateTM Logic Filter Battery Management Power Conversion Smart /SIM Card Analog Switches Charger Control Pass Elements Wall Charge Adapter TVS Standard Producs USB Interface Car Charge Adapter Li-Ion Protection NiMHd/NiCd Protection ON Portfolio Products

  3. SIM/ SMART Card ON Solutions for Cellular Phones Baseband (DSP, MCU & Memory) RF Battery Charger Inner Battery Charger NCP1800 NTHD4P02 NTHD3101 (or NTGS3441T1 +MBRM120LT3) SIM Card Interface Reset Controller DC/DC Converter LDO (Baseband) LDO(RF) PA controller Li-ion Battery NCP4523,MC78PC NCP4561, MC33761/2 NCN6000 NCN6010 NCP1501 NCP1510/1 MBRM120 NCP500, 511 (150mA); NCP512 (80mA) MC33170 RF Power Detector NCS5000 NCP300~5 MAX809/810 Over-voltage Protection IC MC33765 (5 outputs) Battery Pack NCP345/6 MicroIntegrationTM Mini-gate Logic Analog Switch Audio Amp for Speaker & Polyphonic Ringer Driver TVS array White LED Driver NCP802 NTQD6968 NLAS4599 NLAS44599 NLAS4501 NLAS323/4/5 MC74VHC1Gxx MC74HC1Gxx NL17SZxx NL27WZxx MUN series DTA series DTC series MDC3105 SMS05/15/24 SM12 NZQA5V6 MSQA6V1 NSQA6V8 1PMT16A SMS05/12/24C SMF05/12/24C Vibrator Drivers NCP5007 NCP1403 MBR0520LT1 NCP2890 NCP4894 NCP4896 NCP5426 MDC3105 NUD3105 Small signal MOSFET Filter NZF220DF NZF220TT STF202-22 NZMM7V0T4 NUF6105 NTGS3441/3 NTHS2101 NTJD4105 NTR4101 MBRM120 MBR0520 MMBT35200NSR15WT1 Stereo Audio Amp for MP3 Headset • * (Black) Analog products • * (Blue) Integrated Power (TVS, Filter, Driver, MOSFET) • (Green) Standard Components • (Italic) New products NCP2809

  4. High clamping Voltage (35V) 高钳位电压(35V) Conversion Factor: 转换因子： V = “X “ / [(2/267)*(0.1)*(0.5)] V = 7.98KV 5V/div Low clamping Voltage (7V) 低钳位电压(7V) Clamping Voltage (8V) 钳位电压(8V) 5V/div 5V/div ESD Response Comparison between ON Semi, Varistors & Competitor 安森美半导体、变阻器和竞争者的ESD响应比较 Condition 1: Applied 8kV ESD contact pulse using a high frequency test board (Low inductance, ideal case). 状况1：使用高频测试板施加8kV ESD 接触脉冲(低电感，理想状况)。 Input: 8KV ESD Pulse, IEC 61000-4-2 输入： 8KV ESD脉冲， IEC 61000-4-2 Output: Varistor, VA-C1005-5R5E 输出：变阻器，VA-C1005-5R5E Output: ON Semiconductor, MSQA6V1 输出：安森美半导体， MSQA6V1 Output: Competition, SMF05 输出：竞争者，SMF05

  5. ESD Response Comparison between ON Semi, Varistors & Competitor 安森美半导体、变阻器和竞争者的ESD响应比较 Conversion Factor: 转换因子： V = “X “ / [(2/267)*(0.1)*(0.5)] V = 7.98KV High clamping Voltage (40V) 高钳位电压(40V) 5V/div Better response even with the effect of parasitic (V=Ldi/dt) 即使有寄生效应(V=Ldi/dt)也有较好的响应 Bad response due to the parasitic effect (V=Ldi/dt) 寄生效应(V=Ldi/dt) 造成响应变差 5V/div 5V/div Condition 2: Applied 8kV ESD contact pulse using a normal test board (Inductance =10nH, real board case) 状况2：使用正常测试板施加8kV ESD 接触脉冲(电感=10nH，真实状况)。 Input: 8KV ESD Pulse, IEC 61000-4-2 输入： 8KV ESD脉冲， IEC 61000-4-2 Output: Varistor, VA-C1005-5R5E 输出：变阻器，VA-C1005-5R5E Output: ON Semiconductor, MSQA6V1 输出：安森美， MSQA6V1 Output: Competition, SMF05 输出：竞争者，

  6. IEC 61000-4-2 ESD pulses are very fast rise time (between 0.7 and 1nsec) IEC 61000-4-2 ESD 脉冲的上升时间很快(在 0.7 和1nsec之间) Response time measured from 10% to 90% of the peak Voltage 15 nsec 从峰值电压10% 到 90%测量的 响应时间： 15 nsec Response time measured from 10% to 90% of the peak Voltage 10 nsec 从峰值电压10% 到 90%测量的 响应时间： 10 nsec ESD Response time Comparison between ON Semi, and Varistors 安森美半导体和变阻器的ESD响应时间比较 Output: Varistor, VA-C1005-5R5E 输出：变阻器，VA-C1005-5R5E Input: 8KV ESD Pulse, IEC 61000-4-2 输入： 8KV ESD脉冲， IEC 61000-4-2 Output: ON Semiconductor, MSQA6V1 输出：安森美， MSQA6V1 Test condition: 测试条件： Applied 8kV ESD contact pulse using a high frequency test board (Low inductance, ideal case). 使用高频测试板施加8kV ESD 接触脉冲(低电感，理想状况)。

  7. Package Size Comparison封装尺寸比较 On Semiconductor SC88 (2 x 2 x 1) 安森美半导体SC88 On Semiconductor SOT-563 (1.6 x 1.6 x 0.60) 安森美半导体 SOT-563 Varistor (3.2 x 1.6 x 0.9) 变阻器 英寸 毫米 尺寸 英寸 毫米 尺寸

  8. ON Semiconductor (MSQA6V1) 安森美半导体 Varistor 变阻器 Clamping voltage 7V 35V Response Time 响应时间 10nS 15nS Surge 浪涌 11V 20V Leakage 漏电 0.04uA 4uA Foot Print 占用面积 1.6 x 1.6 3.2 x 1.6 Height Profile 高度 0.55 0.90 Capacitance 电容 90pF 360pF Lifetime 寿命 / Price Conclusion结论

  9. ESD Conclusion • IC’s must be protected because most of them cannot withstand • ESD conditions higher than 2kV. • ON Semiconductor devices showed the best performance • to suppress ESD pulses generated by the IEC 61000-4-2 • ESD standard. • PCB lay-out is critical to improve ESD protection and reduce the • parasitic effects (V=Ldi/dt). • Varistors do not offer an effective ESD protection because their • clamping voltage is too high. They cannot be used for protection • in high speed data lines either because of their high capacitance. • Semtech’s devices are more sensitive to board parasitic effects, • which could be due to higher package’s inductance.

  10. TVS- Dual / Multi-Line Array Protection Smallest package (1.6x1.6mm)

  11. NZQA5V6XV5T1; NZQA6V2XV5T1; NZQA6V8XV5T1; NZQA8V2XV5T1; NZQA5V6AXV5T1; NZQA6V8AXV5T1; MSQA6V1W5T2; SMF05T1; NSQA6V8AW5T2 4 Uni-Directional ESD Protection Packages: SC-88A (for MSQA, SMF05, NSQA) SOT-553 (for NZQA series) IC to be Protected IC to be Protected Bottom Connector Benefits: • Integrated Solution • Increase Reliability & Quality • Saving Board Space • Low Capacitance (as low as 12pF typical for NZQA6V8A and NSQA6V8A) SMF05C; NUP5102VX6 • 5 Uni-Directional ESD Protection • Packages: SC-88 ( SMF05C) SOT-563 (NUP5102)

  12. NUP4101FCT1; NUP4102XV6T1 4 Bi–Directional ESD Protection Low Capacitance ( <10pF @ 3V) Package: NUP4101FCT1: Flip-Chip NUP4102VX6T1: SOT-563 Vcc SIMDATA SIMCLK SIMRST NUP4101FCT1 NUP4102VX6T1 SIM Card Interface NZQA6V8AXV5T1; NSQA6V8AW5T2 • 4 Unidirectional Array for Protection • Low Capacitance ( <7pF @ 3V) • Package: NZQA6V8AXV5T1: SOT-553 NSQA6V8AW5T2: SC-88A Vcc SIMDATA SIMCLK SIMRST NZQA6V8AXV5T1 MSQA6V1W5T2 Benefits: • ESD Immunity as per IEC61000-4-2 Level 4 • Low Capacitance for fast data rate • Low PCB area (51 x 51 mil for NUP4101FCT1) OR

  13. USB, SIM, SMART Card Interface See complete MicroIntegration portfolio

  14. USB & SIM Card Interface –USB Portfolio for ESD Protection USB 1 Lines (1/2 Port) 2 Lines (1 Port) 4 Lines (2 Port) USB 1.1 I/O Lines + VBus SL05 LC03-6 SRDA05-4 USB 2.0 I/O Lines + VBus NUP4201DR2 NUP2201MR6 NUP4201MR6 Introduced USB I/O Lines Under Develop NUP4301MR6 NUP1301ML3 NUP2301MW6 Proposal USB1.1 USB2.0

  15. USB2.0 USB1.1 USB2.0 TVS – Protection for high Speed Data Line TVS Array for USB Application Low capacitance series <5pF , for USB 2.0 and high speed I/O USB2.0 USB2.0

  16. Introduced Under Develop Proposal USB & SIM Card Interface – USB Portfolio for ESD/EMI Filter Upstream Filter Downstream Filter STF202 NUF2101 USB 1.1 ESD (I/O Lines) + VBus + EMI (Filter) NUF2221W1T2 NUF2101MW6 NUF2101XV6 NUF2221XV6 Seeking market partnership Require Common Mode Choke (Detail on next page) USB 2.0

  17. NUF2221W1T2; STF202-22 2 Line Termination, EMI Filtering and ESD Protection for Upstream USB Port Integrated Pull-up Resistor VCC Protected by Integrated Clamping Diode Package: SC-88 (for NUF2221) TSOP-6 (for STF202) USB Interface Peripheral (Upstream) Vcc NUF4107FCT1 • 4 Channel EMI Filtering with ESD Protection for Data Lines • USB 1.1 Filtering Provided with Speed Detection • Flip-Chip Package NUF2221 & STF202 Vbus USB D+ NUF4107FC In+ Vbus out+ USB D- In- out- in1 out1 D1 in2 out2 D2 Benefits: • IEC61000-4-2 Level 4, ESD Protection • Small PCB space • Up to 27 discrete components replaced in3 out3 D3 in4 GND out4 D4

  18. Microphone /Speaker Operating Voltage: 3.0 to 5.0 Volts • # of lines: 3 to 4 lines • ESD Protection/EMI Filtering LCD Display • Operating Voltage: 3.0 to 4.0 Volts • Clock speed: 13 to 20 MHz • # of data lines: 20 to 24 lines Mega Pixel Camera/ Flash Modules • Operating Voltage: 2.5 to 3.0 Volts • Clock speed: 27 MHz • # of data lines: 16 to 24 lines Key Pad • Operating Voltage: 2.7- 3Volts • # of data lines: 16 to 24 lines Bottom Connector / USB1.1 Interface • Operating Voltage: 2.7- 5Volts • # of data lines: 10 to 20 lines SIM and MMC Interface • Operating Voltage: 2.7- 5Volts • Clock speed: 13 to 34 MHz • # of data lines: 3 or 4 lines ESD/EMI filter in Handset Applications

  19. How EMI filter functions • 10 MHz Clock for DC signal line

  20. Performance Comparison Between Discrete and Integrated Filters Discrete Pi-Filter Integrated Pi-Filter NZF22OTT1 Reduced parasitic L2 < 0.5nH Ground parasitic L1 > 2.8nH usually Sharp Rise Smooth Rise Advantages of ON Semi’s integrated Filters versus discrete filters • Reduced package parasitic for better roll-off frequency response. • Tighter tolerances for integrated components. • Integrated ESD protection. • Significant PCB space savings for optimized designs.

  21. Summary : Protection Devices With Filter

  22. Summary :Protection Devices With Filter

  23. NUF2441FCT1(Available Jun’04) EMI Filter with ESD Protection Inductors Integrated 3.5nH Low Resistance 0.32ohm Integrated Package: ChipFET & Flip-Chip Audio processing and conversion A Speaker D Audio processing and conversion A Speaker OR D Audio/ Speaker Line OR Benefits: • Ui-Directional EMI Filtering Low Power Loss by Integrated Inductors • Replace 12 discrete components • ESD Immunity as per IEC61000-4-2 Level 4 OR NUF2113FCT1(Available Q2’04) • EMI Filter with ESD Protection • Low Resistance 10ohm Integrated • Package: Flip-Chip Benefits: • Bi-Directional EMI Filtering Prevents Noise from Entering/Leaving the System • Low Power Loss by Integrated Low Resistance • Replace 14 discrete components • ESD Immunity as per IEC61000-4-2 Level 4

  24. NUF2114FCT1 EMI Filter with ESD Protection Integrated Solution Package: Flip-Chip Audio processing and conversion A D Headset (Speaker + Microphone) Benefits: • Bi-Directional EMI Filtering Prevents Noise from Entering/Leaving the System • Low Power Loss by Integrated Low Resistance • Replace 14 discrete components • ESD Immunity as per IEC61000-4-2 Level 4

  25. Audio processing and conversion Stage-1 Stage-2 A NMF3501FC NMF3501FC D Microphone Audio Line NMF3501FC & NMF3502FC • -75dB @ 80MHz -1GHz • -60dB @ 1GHz – 2GHz • Two-stage Integrates Filter for Microphone Inputs with Resistors for Biasing, and ESD Protection • Package: Flip-Chip Benefits: • Low PCB area (1.2 x 1.7 mm2) • Very thin package (0.65mm) • Replace 30 discrete components • ESD suppression on both input and output pins (IEC61000-4-2 Level 4)

  26. Keypad • NZMM7V0T4 • 9 EMI/RFI Bi-Directional “Pi” Low Pass Filter • 4 x 4 mm Lead Less MLF Surface Mount Package • Replace 30 discrete components • Package: 24 PIN MLF • NZF220DFT1 • Dual EMI/RFI Bi–directional “Pi” Low–Pass Filters • Package: SC-88A • NZF220TT1 • Single EMI/RFI Bi–directional “Pi” Low–Pass Filters • Package: SC-75 I1 I2 O1 I3 O2 O3 ON’s Filter CPU O7 O8 I7 O9 I8 I9 Benefits: • Suppresses EMI/RFI Noise in Systems Subjected to Electromagnetic Interference • Small Package Size Minimizes Parasitic Inductance, Thus a More “Ideal” Low Pass Filtering Response

  27. NUF9001FC Controller NUF6105/6106 NUF4105 Controller Bottom Connector NUF9001FCT1G • 10 Channel EMI Pi-Filter with ESD Protection • Two Bump Sizes Available • 300mm & 350mm • Package: Flip-Chip Benefits: • Low PCB area (2.6mm x 2.6mm) • Reduced components count • Low line capacitance for high data rate exchange NUF4105FCT1; NUF6105FCT1; NUF6106FCT1(20pF@2.5V) • 4 & 6 Channel EMI Pi-Filter with ESD Protection • Two Bump Sizes Available • 300mm(PB) for NUF4105FC and NUF6105FC • 350mm(PB-free) for NUF4115FC and NUF6115FC • Package: Flip-Chip Benefits: • Low PCB area • Reduced components count • Wide freq. range rejection -35dB from 800MHz to 2.2GHz • Low line capacitance for high data rate exchange

  28. LCD Display NUF9101FCT1 • 10 Channel EMI Pi-Filter with ESD Protection • Two Bump Sizes Available • 300mm & 350mm • Package: Flip-Chip CPU NUF9101FC Benefits: • Low PCB area (2.6mm x 2.6mm) • Reduced components count • Low line capacitance for high data rate exchange NUF4105FCT1; NUF6105FCT1; NUF4115FC; NUF6115FC • 4 & 6 Channel EMI Pi-Filter with ESD Protection • Two Bump Sizes Available • 300mm for NUF4105FC and NUF6105FC • 350mm for NUF4115FC and NUF6115FC • Package: Flip-Chip Benefits: • Low PCB area • Reduced components count • Wide freq. range rejection -35dB from 800MHz to 2.2GHz • Low line capacitance for high data rate exchange NUF6105/15 CPU NUF4105/15

  29. Controller Controller LCD Display NUF4401MNT1,NUF4402,NUF8401 (Available Jul’04) • 4 and 8 Channel EMI Pi-Filter with ESD Protection • 100/200 Ohms line resistor design for LCD application • Package: • NUF4401: 2X2mm QFN package • NUF4402: 1.6X1.6mm QFN package • NUF8401: 1.6X4.0mm QFN package NUF4401 or NUF4402 NUF4105FCT1; NUF6105FCT1; NUF6106FCT1 (20pF@ 2.5V) • 4 & 6 Channel EMI Pi-Filter with ESD Protection • Two Bump Sizes Available • 300mm for NUF4105FC and NUF6105FC • 350mm for NUF4115FC and NUF6115FC • Package: Flip-Chip NUF4105/15 NUF8401 Benefits: • Low PCB area • Reduced components count • Wide freq. range rejection -35dB from 800MHz to 2.2GHz • Low line capacitance for high data rate exchange

  30. Mega pixel Camera Interface NUF6106FCT1 (21pF@ 2.5V) • 6 Channel EMI Pi-Filter with ESD Protection • Low Capacitance (21pF@2.5V) for Mega pixel/ high speed dataline • Package: Flip-Chip Benefits: • Low PCB area • Reduced components count • Wide freq. range rejection -25dB from 800MHz to 2.2GHz • Low line capacitance for high data rate exchange NUF6106FC CPU CAMERA

  31. Vcc in1 out1 SIMDATA in2 out2 SIMCLK in3 out3 SIMRST NUF3101FCT1 SIM Card Interface NUF3101FCT1(Available in Jun 04) • Integrated Filter with ESD Protection • 3 channels are dedicated to data lines and 1 channel is for the supply voltage • Package: Flip Chip (1.6X1.6mm)

  32. Multimedia Card Interface NUF4105FCT1; NUF4115FC • 4 Channel EMI Pi-Filter Array for Data Lines with ESD Protection • Two Bump Sizes Available • 300mm for NUF4105FCT1 • 350mm for NUF4115FC • Package: Flip-Chip Vcc NUF4105FC NUF4115FC Vcc in1 out1 MMCDATA MMCCLK in2 out2 MMCCMD in3 out3 GND Benefits: • Low PCB area • Reduced components count • Wide frequency range rejection -35dB from 800MHz to 2.2GHz • Low line capacitance for high data rate exchange NZMM7V0T4 • 9 EMI Bi-Directional “PI” Low Pass Filter • Package: 24 PIN MLF Benefits: • Low PCB area • Reduced components count • Low parasitic inductance, providing a more ideal low pass filtering response

  33. Multimedia Card Interface NUF3101FCT1 • Integrated Filter with ESD Protection • 3 channels are dedicated to data lines and 1 channel is for the supply voltage • Package: Flip Chip @ 300um Vcc NUF3101FC Vcc in1 out1 MMCDATA MMCCLK in2 out2 MMCCMD in3 out3 GND Benefits: • Low PCB area • Reduced components count • Wide frequency range rejection • -30dB @ 800mHz - 1GH • -25dB @1GHz – 2GHz • Low line capacitance, 20pF typical, for high data rate exchange

  34. Vcc in1 out1 SIMDATA in2 out2 SIMCLK in3 out3 SIMRST NUF3101FCT1 SIM Card Interface NUF3101FCT1 • Integrated Filter with ESD Protection • 3 channels are dedicated to data lines and 1 channel is for the supply voltage • Package: Flip Chip Benefits: • Low PCB area • Reduced components count • Wide frequency range rejection -35dB from 800MHz to 2.2GHz • Low line capacitance for high data rate exchange

  35. NUF9001FCT1 –10 channel EMI filter Description This device is a 10 line EMI filter array for wireless applications. Greater than -35 dB attenuation is obtained at frequencies from 800 MHz to 2.2 GHz. It also offers ESD protection – clamping transients from static discharges. ESD protection is provided across all capacitors. Features • EMI Filtering and ESD Protection • 10 line in Flipchip • Moisture Sensitivity Level 1 • Applications • Wireless Phones • Handheld Products • LCD Displays Schedule • Phase 0 approved Approved • Engineering Sample Now • Production Now

  36. NUF6106FCt1 –Low capacitance 6 channel EMI filter for high speed

  37. Discrete capacitor Leaded package Flip chip bumped die Importance of the parasitic inductance Equivalent circuit of discrete capacitor Lower parasitic inductance enable broadband filtering RS C LS C = 33 pF Rs = 0.4 W QFN/DFN MicroLeadless 800 pH 500 pH 100 pH 50 pH

  38. NEW Products NUF8401 • 8- line EMI filter • 1st 8 line filter in DFN package • Sample available : Aug 04 • Production schedule: Sep 04 • CMD 8 line Flip chip (1.5X4.0mm) NUF4401 • 4 Channel filter • Standard 8 leaded QFN pacakage • Sample available: NOW • Production schedule: Aug 04 • NUF4402 • 4 Channel filter • Smallest 4 line filter in QFN package • Sample available : Aug 04 • Production schedule: Sep 04 NUF8401 NUF4402 NUF4401 1.6 X1.6mm 2.0 X2.0mm NUF4402 • 4 Channel filter • Smallest 4 line filter • Sample available : NOW • Production schedule: Aug 04 1.6 X4.0mm

  39. QFN package Better Reliability and robust package Better ESD rating and handling capability All pins accessible after board mounted for debugging or trouble shooting for design engineers Better Filter characteristics than Flip-chip or CSP 50% Less parasitic Inductance than Flip-chip or CSP Increase chip mount density (400um chip to chip separation) Competitive Pricing PROS and CONS (QFN versus Flipchips)

  40. Importance of the parasitic inductance Equivalent circuit of discrete capacitor RS C LS C = 33 pF Rs = 0.4 W Lower parasitic inductance enable broadband filtering

  41. Pin to Pin Compatibility • The DFN package • Pin to Pin replacement • Compatible Foot print • Same Case size • Related Part# are • NUF6401 and NUF6402 Flip chip or BGA (1.33X 3.0mm) DFN package (1.35X3.0mm)

  42. Benchmarking

  43. Vibrator : Integrated Inductance Load Driver VCC Relay/Motor VDD Ch1 – VGS Ch2 – ID Ch3 - VDS uP ON Semi’s device • The driver is activated with + logic voltage/current. • The driver controls the coil of the relay. • The integrated Zener diodes protect the FET from the • inductor’s kick back when it is deactivated. • The relay controls the power lines through its • contacts. SOT-23

  44. NUD3105/MDC3105Inductive Load Driver Description NUD3105 is a MicroIntegration™ device designed to provide a robust driver interface between sensitive control circuits and inductive DC loads. It is optimized to drive relays and other loads from a 3V to 5V rail, and can drive relay coils up to 2.5 watts at 5V. NUD3105 – MOSFET Drive MDC3105 – Bipolar Drive SOT-23 • Features • Low input drive current • Back-to-front transient isolation is inherent • Single package integration • Integrated free-wheeling diode • Guaranteed OFF state if input connection is lost • Benefits • Efficient and easy interface to control logic • Reliable, robust performance • Replaces 3 to 6 discrete devices; saves board space • Eliminates the need for a separate diode across the load • No need to prevent this possibility with extra components Replace 5 discrete! Applications • Telecom line cards,modems,fax,answer machines • Vibrator driver for cell phones and pagers • Desktop computers, peripherals, copiers • Consumer electronics, set top boxes • Small appliances, white goods • Security systems, ATE • Solenoid driver • Automotive relays, motor controls, lamp drivers Ordering Information • NUD3105LT1 SOT23 3kU/reel More Information Online • See http://www.onsemi.com/ • Datasheet: NUD3105/D • Case outline • Samples

  45. Drain Current (A) Focus area >40 PC Motherboard VRM Automotive power Steering 35 DC 48V input DC-DC converter, Color monitor image correction switch 30 AC100V SMPS 25 Back-up Power Supply Handheld products DC-DC converter, Notebook PC 20 AC200V power supply OA equiments, Automotive parts (motor solenoid driver, DC12-24V input DC-DC) 15 Inverter for Lighting 10 AC adapter (Notebook, Portable VCD,DVD) 5 Color monitor (high voltage circuit) Cellular phone 30 60 100 200-250 500 600 800 900 1400 VDS (V) Power Devices Focus Area

  46. Power Products Processes功率产品工艺 • HD3E & HD3E-RP (1-60V): • Low voltage planar technology: Figure of Merit equals Low RDS(ON) verses low gate charge. Best for quick switching applications.低压平面技术：特性为低RDS(ON) 和低栅极电荷。最适合快速开关应用 • TRENCH (1-30V): 沟道(1-30V) • Low voltage trench technology: Figure of Merit equal Low RDS(ON) verses die size. Best for lowest RDS(ON) applications.低电压沟道技术：特性为低RDS(ON) 和小芯片尺寸。最适合低RDS(ON) 的应用 • HD-Plus (1-250V): • Low and Medium voltage planar technology: Combines the use of MOSFET cells with poly resistors, capacitors, diodes and logic MOSFETs. Create simple analog circuits. For smart discretes.低压中压平面技术：把MOSFET单元和聚酯电阻，电容，二极管和逻辑MOSFET相结合。建立简单的模拟电路。高性能分立元件。

  47. 4Q03 1Q02 2Q02 3Q02 4Q02 1Q03 2Q03 3Q03 Production Q1 RTM Development MOS Power Process Roadmap Market Segments • Portables/Wireless • Computing HD3E - 20 to 30 V, N & P Ch • Automotive • Computing TMOS 7 - 40 to 250V, N & P Ch • Automotive • Computing HD Plus Trench 8V P-Channel • Portable & Wireless Product Portfolios Trench 20V P-Channel • Portable & Wireless Trench 20V N-Ch • Portable & Battery Trench 30 V N/P Ch • Computing

  48. World Class Performance using Square Cell We offer the industry’s leading RDS(ON) because we have highest effective channel density ON Semi Competitors recent announcements Competitors Today Figure 1

  49. New MOSFET in TSOP6/SOT23 Package SOT-23 3.0 X 3.0 mm TSOP-6 3.0 X 3.0 mm * Trench

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