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Sub-Picosecond Pulse Generation using Fast Saturable Absorption in AlGaInAs/InP Quantum Wells

Sub-Picosecond Pulse Generation using Fast Saturable Absorption in AlGaInAs/InP Quantum Wells. M. Haji, L. Hou, A. E. Kelly, R. G. Green, G. Mezosi, J. Javaloyes, A. C. Bryce, J. M. Arnold. Contents. Absorber Dynamics – Carrier lifetimes, pulse widths.

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Sub-Picosecond Pulse Generation using Fast Saturable Absorption in AlGaInAs/InP Quantum Wells

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  1. Sub-Picosecond Pulse Generation using Fast Saturable Absorption inAlGaInAs/InP Quantum Wells M. Haji, L. Hou, A. E. Kelly, R. G. Green, G. Mezosi, J. Javaloyes, A. C. Bryce, J. M. Arnold

  2. Contents • Absorber Dynamics – Carrier lifetimes, pulse widths. • Absorption recovery times in AlGaInAs/InP quantum wells. • Ultrashort pulse generation using a mode locked laser in AlGaInAs/InP quantum wells.

  3. Absorber Dynamics K. A. Williams, M. G. Thompson and I. H. White, New Journal of Physics, 6 (2004) 179.

  4. Loss Recovery Times in AlGaInAs Absorbers Polarisation Controller - 10GHz Pulses 2.5ps R1 V + λS =1570nm R2 EDFA CW Tunable Laser 50um long cavity 3.5um deep etched side walls R1 = 30% (etched facet), R2 = 2% (10° tilted facet) 5 InAlGaAs quantum wells BPF λP λP = varied EDFA DCA Oscilloscope (85 GHz BW)

  5. Stark Shift of Reflected Signal Device reflectivity at different VSA

  6. Recovery Times in AlGaInAs/InP MQWs Measured τa verses reverse bias Voltage (Input pulse recovery ~ 3ps)

  7. Recovery Times in AlGaInAs/InP MQWs Measured τa verses reverse bias Voltage K. Nishimura et al., IEEE J. Select. Top. Quant. Electron., vol. 11, no. 1, pp 278-284 (2005) .

  8. Mode Locking in InAlGaAs/InP Ti/Pt/Au SiO2 AlGaInAs dry etch stop layer MQW-GRINSCH n-InP substrate Total Length = 1070 um Absorber Length = 20um 50:1 Ratio

  9. Mode Locking Results Autocorrelation Trace IGain = 40mA VSA = -3V

  10. Mode Locking Results Pulse Width Measurement Δt = 600 fs Δt = 848 fs Δt = 777 fs

  11. Mode Locking Results LI plots at different VSA

  12. Optical Spectrum and RF Spectrum RF Spectrum Optical Spectrum

  13. Pulse Width Mode locking region and Measured Pulse Widths

  14. Conclusions • Recovery times below 5ps have been obtained on InAlGaAs/InP MQWs. • Able to generate femtosecond pulses using a 40 GHz mode-locked laser. • Pulse widths are notably shorter than those generated in P-quaternary MQWs. • - 860 fs (Lorentzian pulses) @ 21 GHz. • (K. Merghem, et al., 2008, Optics Express, Vol. 16, No. 14, pp10675.)

  15. Acknowledgements

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